Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

Brand Name:Crystro
Certification:ISO:9001, ISO:14001
Model Number:CR2202241-04
Minimum Order Quantity:1pc
Delivery Time:1-4weeks
Payment Terms:T/T, Western Union, MoneyGram, Paypal
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Address: NO.10, HEZHANG ROAD
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Customized Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS

Crystro can customize Surface Acoustic Piezoelectric Wafers including :

Lithium Niobate,Lithium Tantalate,Quartz Crystal as reuqired cutting orientation and size,our Piezoelectric Effect crystals are grown by Czochralski method. Max diameter reach 6inch,we can custom size and specs ,rougness<0.5nm.
Dia 3" 4" 6" wafers are all available as per requirement.


Crystro possess Corning Flatmaster 200 Profiler, Laser marking equipment, AOI and 6-step cleaning line.


Crystro provides:


Excellent photoelectric property
High Damage Threshold
High Curie Temperature



Basic Properties of LiTaO3:

MaterialLithium NiobateLithium TantalateQuartz Crystal
Diameter / Size3’’, 4’’, 6’’, 8’’3’’, 4’’, 6’’3’’, 4’’, 5’’, 6’’, 8’’
Cut TypeX / Y / ZX / Y-Z / X-112YX / Y / Z
36Y / 64Y/128Y28Y / 36Y / 42YAT / ST / DT
Surface FinishDouble side polish / Single side polish
Thickness0.25mm / 0.35mm / 0.50mm / 1.00mm / 2.00mm
TTV< 5um
PLTV>98% (5mm*5mm)
LTV< 1.5um
Bow-25um < Bow < +25um
Warp< 30um
RoughnessRa<0.5nm, Ra<1nm
Curie Temp.1142℃ ± 2℃605℃ ± 2℃573℃
Edge ProfileRound Ground, "C" Shape
Flats22±2mm, 32.5±2mm, 47.5±2mm, 57.5±2mm, Notch
As per request
Dope withEr, MgOFewith or without seed
Front SideRoughness Ra<= 10A
Back SideRoughness Ra: 0.2--0.7um GC#1000, GC#2000
AppearanceNo Cracks, saw marks, stains
Single DomianCompleted Polarization / ReducedNo Stress


China Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized supplier

Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

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