Dia 1.5mm Scintillation Ce GAGG Scintilation Single Crystal Rod
Brand Name:Crystro
Certification:ISO9001,RoHS,Reach
Model Number:CR210629-01
Minimum Order Quantity:1pc
Delivery Time:4-5 weeks
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Dia1.5mm Ce:GAGG Scintilation Single Crystal Rod
Ce: GAGG crystal (chemical formula Ce: Gd3Al2Ga3O12, also known as cerium-doped gadolinium aluminum gallium garnet crystal) is a scintillation crystal with excellent comprehensive performance, which is widely used in scientific research and industrial high-energy ray detection. Ce: The effective atomic number of the GAGG crystal is as high as 54.4, and the peak wavelength of the emission spectrum located at 520nm, which matches well with the sensitive wavelength range of the photomultiplier tube (PMT) and silicon photodiode (PD).
GAGG(ce) is a very promising scintillator in high energy industrial field, when it was characterized on life test under 115kv, 3mA and the radiation source located at a 150 mm distance from crystal, after 20 hours the performance is nearly the same as the fresh one. It means it has a good prospect to withstand high dose under X-ray irradiation, of course it depends on irradiation conditions and in case of going further with GAGG for NDT further exact test need to be conducted.
Anhui Crystro participate in the kinds exhibitions every year:
Laser World of Photonics Munich, Shanghai, Photonics West in San
Francisco, CIOE in Shenzhen, etc.
CRYSTRO can offers GAGG with:
High density
High light yield
Fast decay time
Chemically inert
High sensitivity
High energy resolution
Main Advantages:
1. Relatively bright – emitting >50,000 photons/MeV
2. Good absorbers with good stopping powers - density 6.63 g/cm³
3. Broadly emitting with a 540nm peak
4. Good Energy resolution
Main Applications:
γ-ray detection
X-ray medical imaging
Nuclear physics
Nuclear radiation detection
PET
Main Properties:
| Properties | Units |
| Wavelength (Max. Emission) | 520 nm |
| Wavelength Range | 475 - 800 nm |
| Decay Time | 50 - 150 ns |
| Light Yield | 40 - 60 photons/keV |
| Refractive Index | 1.9 @540nm |
| Density | 6.63 g/cm³ |
| Atomic Number (Effective) | 54.4 |
| Melting Point | 1850 ºC |
| Thermal Expansion Coeff. | TBA x 10‾⁶ C⁻¹ |
| Hardness | 8 Mhos |
| Property | Ce:GAGG |
| Chemical composition | Gd3AlxGa5-xO12 |
| Symmetry | Cubic |
| Structure | Ia3d |
| Mohs Hardness | 8 |
| Density(g/cm3) | 6.63 |
| Refractive index(λ=550nm) | 1.9 |
| Emission peak (nm) | 540 |
| Light yield (Photons•Mev-1) | >50000 |
| Decay time(ns) | 90 |
| Energy resolution | <6% |
| Zeff | 54 |
Dia 1.5mm Scintillation Ce GAGG Scintilation Single Crystal Rod
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