Hauni Protos Nano Through-Hole Version Mosfet Irfz44ns For Kretek Machines
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Hauni Protos Nano Through-Hole Version Mosfet Irfz44ns For Kretek Machines
Silicon Transistor
The first working silicon transistor was developed at Bell Labs on January 26, 1954, by Morris Tanenbaum. The first commercial silicon transistor was produced by Texas Instruments in 1954. This was the work of Gordon Teal, an expert in growing crystals of high purity, who had previously worked at Bell Labs.
High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
Point-Contact Transistor
In 1948, the point-contact transistor was independently invented by German physicists Herbert Mataré and Heinrich Welker while working at the Compagnie des Freins et Signaux Westinghouse, a Westinghouse subsidiary located in Paris. Mataré had previous experience in developing crystal rectifiers from silicon and germanium in the German radar effort during World War II. Using this knowledge, he began researching the phenomenon of "interference" in 1947.
Hauni Protos Nano Through-Hole Version Mosfet Irfz44ns For Kretek Machines
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