808nm Wavelength 500mW output power Bare Laser Diode Chip

Brand Name:HTOE
Model Number:CLDM-0808-0500-02
Minimum Order Quantity:100 pcs
Delivery Time:15-30 working days
Payment Terms:T/T
Place of Origin:Beijing, China
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Location: Beijing Beijing China
Address: Shahe Industrial Park, Changping District, Beijing, China
Supplier`s last login times: within 27 hours
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500m watt , 808 nm Unmounted Single Emitter , Unmounted Laser Diode


Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output;
  • Unmounted single emitters up to 2W CW Power;
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm.

Parameters(25℃)


ParameterUnitCLDM-0808-0500-02
Optical ParameterOutput Power PomW500
Center Wavelength λcnm808 ± 5
Beam Divergence θ×θdeg38x10
CODW≥ 1.00
GeometricalEmitter Widthμm50
Widthμm500
Cavity Lengthμm600
Electrical ParameterSlope Efficiency EsW/A≥ 1.10
Threshold Current IthA≤ 0.12
Operating Current IfA≤ 0.6
Operating Voltage VfV≤ 1.9

Notice


1. Item notice: CLDM( item model)-0808( center wavelength)-0500( output power)-02.

2. Data sheet is based on the result of testing under 25℃.

3. Data sheet is based on the C-Mount package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


China 808nm Wavelength 500mW output power  Bare Laser Diode Chip supplier

808nm Wavelength 500mW output power Bare Laser Diode Chip

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