SiC Carrier Plate Thermal Conductivity Corrosion Resistance MOCVD Wafer

Introduction​​ Of SiC Carrier Plate

The SiC Carrier Plate is a precision support substrate made from high-purity silicon carbide. It offers excellent thermal conductivity, high hardness, mechanical strength, and outstanding resistance to chemical corrosion. With a precisely machined and polished surface, SiC carrier plates are widely used in wafer processing, MOCVD epitaxy, high-temperature annealing, and other demanding applications. Compared with traditional materials like quartz or AlN, SiC provides superior thermal stability and extended service life.

Working Principle Of SiC Carrier Plate

In high-temperature processes, the SiC carrier plate serves as a support to carry wafers or thin-film materials. Its high thermal conductivity ensures uniform heat distribution, improving process stability and uniformity. Additionally, due to its hardness and chemical inertness, the plate maintains structural integrity even in corrosive environments, ensuring product purity and equipment safety.

Typical Applications Of SiC Carrier Plate

• Substrate support in MOCVD epitaxy
• Thermal processing of wide-bandgap semiconductors like SiC and GaN
• Annealing, sintering, and diffusion processes for wafers
• Heat spreaders and carriers in LED chip manufacturing
• Material transport and support in high-vacuum or corrosive environments

Q&A Of SiC Carrier Plate

Q1: What is the maximum operating temperature of SiC carrier plates?
A: SiC plates can typically withstand temperatures up to 1600°C or higher, depending on the processing environment and duration.

Q2: How does SiC compare with AlN or quartz carriers?
A: SiC offers higher thermal conductivity, superior thermal shock resistance, and longer service life, making it ideal for harsh and repeated-use applications.

Q3: Can the size and shape be customized?
A: Yes, we offer customized sizes, thicknesses, hole patterns, and surface finishes to suit your specific equipment and process requirements.

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