4h-N 100um Silicon Carbide Abrasive Powder For SIC Crystal Growth
Brand Name:ZMSH
Model Number:Silicon powder
Minimum Order Quantity:10kg
Delivery Time:4-6weeks
Payment Terms:T/T
Place of Origin:China
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Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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Product Details
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Product Details
Abstract
Silicon carbide (SiC), a third-generation wide-bandgap semiconductor, dominates high-temperature, high-frequency, and high-power markets including EVs, 5G, and renewable energy. Silicon Powder for SiC is a specialized ultra-pure silicon source engineered for SiC crystal growth and device fabrication. Produced via advanced plasma-assisted CVD technology, it delivers:
- Ultra-high purity: Metal impurities ≤1 ppm, oxygen ≤5 ppm (meeting ISO 10664-1 standards).
- Tailorable particle size: D50 range of 0.1–5 μm with narrow distribution (PDI <0.3).
- Superior reactivity: Spherical particles enhance chemical activity, boosting SiC growth rates by 15–20%.
- Environmental compliance: RoHS 2.0/REACH-certified, non-toxic, and
zero residue risk.
Unlike conventional metallurgical silicon powders, our product employs nanoscale dispersion and plasma purification to reduce defect densities, enabling efficient production of 8-inch+ SiC wafers.
Compony Introduction
Our company, ZMSH, has been a prominent player in the semiconductor industry for over a decade, boasting a professional team of factory experts and sales personnel. We specialize in providing customized sapphire wafer solutions, offering both tailored designs and OEM services to meet diverse client needs. At ZMSH, we are committed to delivering products that excel in both price and quality, ensuring customer satisfaction at every stage. We invite you to contact us for more information or to discuss your specific requirements.
Silicon powder Tecnical Parameters
| Parameter | Range | Method | Typical Value |
|---|---|---|---|
| Purity (Si) | ≥99.9999% | ICP-MS/OES | 99.99995% |
| Metal impurities (Al/Cr/Ni) | ≤0.5 ppm (total) | SEM-EDS | 0.2 ppm |
| Oxygen (O) | ≤5 ppm | LECO TC-400 | 3.8 ppm |
| Carbon (C) | ≤0.1 ppm | LECO TC-400 | 0.05 ppm |
| Particle Size (D10/D50/D90) | 0.05–2.0 μm可调 | Malvern Mastersizer 3000 | 1.2 μm |
| Specific Surface Area (SSA) | 10–50 m²/g | BET (N₂ adsorption) | 35 m²/g |
| Density (g/cm³) | 2.32 (true density) | Pycnometer | 2.31 |
| pH (1% aqueous solution) | 6.5–7.5 | pH meter | 7.0 |
SiC powder Applications
1. SiC Crystal Growth
- Process: PVT (Vapor Transport)/LPE (Liquid Phase Epitaxy)
- Role: High-purity Si source reacts with carbon precursors (C₂H₂/CH₄) at >2000°C to form SiC nuclei.
- Benefits: Low oxygen content minimizes grain boundary defects; uniform particle size improves growth rate by 15–20%.
2. MOCVD Epitaxial Deposition
- Process: Metal-Organic CVD (MOCVD)
- Role: Doping source for n-type/p-type SiC layers.
- Benefits: Ultra-pure material prevents epitaxial layer contamination, achieving electron trap density <10¹⁴ cm⁻³.
3. CMP Polishing
- Process: Chemical Mechanical Planarization
- Role: Reacts with SiC substrate to form soluble SiO₂ for surface smoothing.
- Benefits: Spherical particles reduce scratching risk; polishing speed increases 3x vs. alumina slurries.
4. Renewable Energy & Photovoltaics
- Applications: Holes transporting layers in perovskite solar cells, solid-state electrolyte additives.
- Benefits: High SSA enhances material dispersion, reducing interfacial resistance.
Product Display - ZMSH
SiC Powder FAQ
Q: How does silicon purity impact SiC device performance?
A: Impurities (e.g., Al, Na) create deep-level defects, increasing carrier recombination. Our silicon powder (<0.5 ppm metals) reduces RDS(on) in 6-inch SiC MOSFETs by 10–15%.
4h-N 100um Silicon Carbide Abrasive Powder For SIC Crystal Growth
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