ZnTe Wafer ZnTe Crystal Type N Type P Custom Sizes And Specifications Available

ZnTe: ZnTe wafer, ZnTe crystal Type N, Type P, Custom Sizes and Specifications Available

Abstract of ZnTe

Zinc telluride (ZnTe) is a direct bandgap semiconductor widely used in optoelectronics and photonics. With a bandgap of approximately 2.26 eV, ZnTe exhibits excellent optical properties, making it suitable for applications in infrared detectors, light-emitting diodes, laser diodes, and solar cells. Its cubic crystal structure and high thermal stability also make it a preferred material for high-temperature optical windows. ZnTe's ability to absorb and emit specific wavelengths of light further enhances its use in various photonic devices. Research into ZnTe quantum dots and its role in emerging technologies, such as quantum computing, continues to expand its potential applications.

Physical and Chemical Properties

ZnTe is a direct bandgap semiconductor, meaning it can efficiently absorb and emit light. Its bandgap is approximately 2.26 electron volts (eV), which lies in the visible to near-infrared region of the electromagnetic spectrum. This property makes it ideal for applications in both the visible and infrared spectral ranges. The material has a cubic crystal structure known as the zinc blende structure, which it shares with other II-VI semiconductors. ZnTe exhibits high thermal stability, making it suitable for high-temperature applications, and it has a relatively high density of 6.1 g/cm³.

ZnTe also has excellent optical properties, particularly in the infrared spectrum. Its transmission characteristics in the infrared region allow it to function as a good optical window material for various high-tech applications. The material’s optical transparency, along with its relatively low absorption in certain spectral regions, makes it valuable for use in infrared detectors, optical communication, and laser systems.

Electrical Properties and Applications

ZnTe’s direct bandgap and semiconducting nature make it suitable for various electronic and optoelectronic applications. Some of its most notable applications include:

1.Infrared Detectors: Due to its optical properties, ZnTe is widely used in infrared detectors, which are essential in various fields such as environmental monitoring, thermal imaging, and military surveillance. ZnTe detectors can operate efficiently in the mid- and long-wave infrared spectrum, detecting infrared radiation emitted from objects, which is especially useful in heat sensing.

2.Light-Emitting Diodes (LEDs): ZnTe’s ability to emit light when electrically biased makes it ideal for use in LEDs, particularly in the infrared and visible light ranges. ZnTe-based LEDs are used in optical communication systems, displays, and various other photonic devices. The material’s transparency in the infrared range also allows for more efficient light emission in certain wavelengths.

3.Laser Diodes: ZnTe can be used in the fabrication of laser diodes, particularly for short-wavelength lasers. These lasers are important for communication, industrial processing, and medical applications. The high-quality ZnTe crystals grown via MBE are particularly useful in laser diode construction.

4.Solar Cells: ZnTe has potential applications in thin-film solar cells. As part of a heterojunction with other materials like CdTe, ZnTe can be used to create efficient photovoltaic devices. ZnTe’s ability to absorb a wide spectrum of sunlight and its suitable bandgap make it a promising candidate for renewable energy technologies.

5.Optical Windows and Infrared Optics: ZnTe’s transparency in the infrared region allows it to be used as an optical window material in high-performance devices. It is often used in infrared optical systems, including lenses, windows, and mirrors, where it can transmit infrared radiation without significant losses.

Q&A

Q:What are the preparation methods of ZnTe?

A:1.Vapor deposition: such as chemical vapor deposition (CVD) or physical vapor deposition (PVD).

2.Molecular beam epitaxy (MBE) : for high quality film growth.

3.Melting method: The bulk material is prepared by melting zinc and tellurium at high temperature.

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