SiC Wafer 4inch 12inch 4H N type Semi type Production grade Research grade Dummy grade DSP Customization

SiC Wafer 4inch 12inch 4H N type Semi type Production grade Research grade Dummy grade DSP Customization

Product Description of 12 INCH SiC Wafer:

The rapid development of first-generation and second-generation semiconductor materials represented by silicon (Si) and gallium arsenide (GaAs) has propelled the swift advancement of microelectronics and optoelectronics technologies. However, due to limitations in material performance, devices made from these semiconductor materials mostly operate in environments below 200°C, failing to meet the requirements of modern electronics for high-temperature, high-frequency, high-voltage, and radiation-resistant devices. In contrast, silicon carbide wafers, particularly 12inch SiC wafers and 300mm SiC wafers, offer superior material properties that enable reliable performance in extreme conditions. The adoption of large-diameter SiC wafers is accelerating innovation in advanced electronics, providing solutions that overcome the limitations of Si and GaAs.

The character of 12inch SiC Wafer:

1. Wide Bandgap:

12inch SiC 300 Silicon carbide wafers have a wide bandgap, typically ranging from 2.3 to 3.3 electron volts, higher than that of silicon. This wide bandgap enables silicon carbide wafer devices to operate stably in high-temperature and high-power applications and exhibit high electron mobility.
2. High Thermal Conductivity:

12inch SiC 300 Silicon carbide wafers The thermal conductivity of silicon carbide wafers is approximately three times that of silicon, reaching up to 480 W/mK. This high thermal conductivity allows silicon carbide. wafer devices to dissipate heat quickly, making them suitable for the thermal management requirements of high-frequency electronic devices.
3. High Breakdown Electric Field:

12inch SiC 300 Silicon carbide wafers have a high breakdown electric field, significantly higher than that of silicon. This means that under the same electric field conditions, silicon carbide wafers can withstand higher voltages, contributing to increased power density in electronic devices.
4. Low Leakage Current:

Due to the structural characteristics of silicon carbide wafers, they exhibit very low leakage currents, making them suitable for applications in high-temperature environments where strict requirements for leakage current exist.

Table of parameters of 4inch 12inch SiC Wafer:

Physical photo of 4inch 12inch SiC Wafer:

Applications of SiC Wafer:

1.In the field of electronics, silicon carbide wafers are widely used in the manufacturing of semiconductor devices. Due to its excellent electrical conductivity and thermal conductivity, it can be utilized in the production of high-power, high-frequency, and high-temperature electronic devices such as power transistors, RF field-effect transistors, and high-temperature electronic devices. Additionally, silicon carbide wafers can also be employed in the manufacturing of optical devices like LEDs, laser diodes, and solar cells.4 inch 12inch Silicon carbide (SiC) wafer is used for hybrid and electric vehicles and green energy generation.

2.In the field of thermal applications, silicon carbide wafers find extensive use as well. With its superior thermal conductivity and high-temperature resistance, it can be used in the production of high-temperature ceramic materials.

3.In the field of optics, silicon carbide wafers also have broad applications. Due to its excellent optical properties and electrical conductivity, it can be used in the manufacturing of optical devices. Furthermore, silicon carbide wafers can also be utilized in the production of optical components such as optical windows.

Image of application of SiC wafer:

FAQ:

Product Recommend:

1. 2inch SIC Silicon Carbide Wafer 4H-N

2. Silicon Carbide wafers 8inch