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The 4-H Semi-Insulating SiC substrate is a high-performance semiconductor material with a wide
range of applications. It derives its name from its growth on the
4H crystal structure. This substrate exhibits exceptional
electrical characteristics, including high resistivity and low
carrier concentration, making it an ideal choice for radio
frequency (RF), microwave, and power electronic devices.
Key features of the 4-H Semi-Insulating SiC substrate include highly uniform electrical properties, low
impurity concentration, and outstanding thermal stability. These
attributes make it suitable for the fabrication of high-frequency
RF power devices, high-temperature electronic sensors, and
microwave electronic equipment. Its high breakdown field strength
and excellent thermal conductivity also position it as the
preferred substrate for high-power devices.
Furthermore, the 4-H Semi-Insulating SiC substrate demonstrates excellent chemical stability, allowing it
to operate in corrosive environments and expanding its range of
applications. It plays a critical role in industries such as
semiconductor manufacturing, telecommunications, defense, and
high-energy physics experiments.
In summary, the 4-H Semi-Insulating SiC substrate, with its outstanding electrical and thermal properties,
holds significant promise in the semiconductor field and provides a
reliable foundation for the production of high-performance
electronic devices.
High-Power Electronic Devices: Semi-Insulating SiC is ideal for high-power and high-frequency electronic devices due
to its high breakdown voltage and high thermal conductivity. It is
used in power MOSFETs, diodes, and IGBT
RF Devices: Due to its high thermal conductivity and low loss, Semi-Insulating SiC is employed in RF devices such as microwave power amplifiers and
RF transistors.
Optoelectronic Devices: Semi-Insulating SiC also exhibits excellent optoelectronic properties, making it
suitable for manufacturing LEDs, lasers, and photodetectors.
Electronic Devices in High-Temperature Environments: The material's
high melting point and excellent chemical stability make Semi-Insulating SiC widely used in electronic devices that operate in high-temperature
environments, such as in aerospace, automotive, and industrial
process control.
Radiation-Hardened Devices: Semi-Insulating SiC is highly resistant to radiation, making it suitable for
radiation-hardened electronic devices in nuclear reactors and space
applications.
Sensors: The unique properties of Semi-Insulating SiC material make it suitable for manufacturing various types of
sensors, such as temperature sensors, pressure sensors, and
chemical sensors.
High Resistivity: Semi-Insulating SiC possesses very high resistivity, meaning it can effectively impede
the flow of electric current, making it suitable for use as an
insulating layer in high-power electronic devices
High Thermal Conductivity: SiC material has a very high thermal conductivity, which helps in
quickly and efficiently dissipating heat from devices, thereby
enhancing device performance and reliability.
High Breakdown Voltage: Semi-Insulating SiC has a very high breakdown voltage, meaning it can operate in
high-voltage applications without experiencing electrical
breakdown.
Excellent Chemical Stability: SiC remains chemically stable across a wide range of temperatures and
is highly resistant to most acids and bases.
High Melting Point: SiC has an exceptionally high melting point, approximately 2,730°C
(4,946°F), allowing it to maintain stability in extreme
high-temperature environments.
Radiation Tolerance: Semi-Insulating SiC exhibits high tolerance to radiation, making it perform
excellently in nuclear reactor and space applications.
Excellent Mechanical Properties: SiC is a very hard material, showcasing excellent wear resistance and
high strength.
Wide Bandgap Semiconductor: SiC is a wide bandgap semiconductor, featuring high electron mobility
and low leakage current, which results in outstanding performance
in high-temperature and high-frequency electronic devices.
Property | Description |
High Resistivity | Possesses very high electrical resistivity, acting as an effective insulator in high-power electronic devices. |
High Thermal Conductivity | Quickly and efficiently dissipates heat, enhancing device performance and reliability. |
High Breakdown Voltage | Can operate under high-voltage conditions without undergoing electrical breakdown. |
Excellent Chemical Stability | Remains stable across a wide range of temperatures and is highly resistant to most acids and bases. |
High Melting Point | Maintains stability in extreme high-temperature environments with a melting point around 2,730掳C (4,946掳F). |
Radiation Tolerance | Exhibits high resistance to radiation, suitable for use in nuclear reactors and space applications. |
Excellent Mechanical Properties | Very hard material, providing outstanding wear resistance and high strength. |
Wide Bandgap Semiconductor | Functions well in high-temperature and high-frequency applications due to high electron mobility and low leakage current. |
Silicon Carbide (SiC) Wafers are thin slices of semiconductor material primarily used for power electronics. To ensure the wafers are not damaged during shipping, it’s important to follow the proper packaging and shipping instructions.