6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates
Brand Name:ZMKJ
Model Number:6inch
Minimum Order Quantity:5-10pcs
Delivery Time:1-3weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Verified Supplier
Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 38 hours
Product Details
Company Profile
Product Details
6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates
Silicon carbide coated epitaxial sheet tray used in epitaxial furnace equipment/Silicon Carbide Coated Graphite SiC/Excellent Bending Strength Anti Corrosion Graphite Tray / Wafer Tray/Graphite composite plate high purity carbon graphite anode plate
Application | semiconductor integrated circuit |
Features | purity quotient<5ppm |
nano-scale coating and good doping uniformity | |
sealing performance well and strong paint coating bonding ability | |
resistant to corrosion block carbon element binding | |
Advantages | professional custom made service |
short leading time | |
international process products and stable delivery time | |
rapidly product performance improvement services |
CATALOGUE COMMON SIZE
| Grade | Bulk density | Flexural Strength | Compressive Strength | Specific Resistivity | Ash Content |
| GSK-II | 1.72g/cc min | 15Mpa min | 32 Mpa min | 8.0μΩ•m max | 0.3% max |
| HPM-II | 1.78g/cc min | 18Mpa min | 35Mpa min | 10μΩ•m max | 0.1% max |
| HPM-III | 1.83g/cc min | 35Mpa min | 68Mpa min | 10μΩ•m max | 0.1% max |
| Various other grades graphite available. If your required material is not within above grades, please contact us without hesitate, our professional and experienced engineer will choose most suitable grade according to your specific application. | |||||
About ZMKJ Company
ZMKJ can provides high quality single crystal SiC wafer ( Silicon
Carbide ) to electronic and optoelectronic industry . SiC wafer is
a next generation semiconductor material , with unique electrical
properties and excellent thermal properties , compared to silicon
wafer and GaAs wafer , SiC wafer is more suitable for high
temperature and high power device application . SiC wafer can be
supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type ,
Nitrogen doped , and semi-insulating type available . Please
contact us for more product information .
Our Relation Products
Sapphire wafer＆ lens/ LiTaO3 Crystal/ SiC wafers/ LaAlO3 /
SrTiO3/wafers/ Ruby Ball
FAQ
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100% deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates
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