8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate
Brand Name:ZMKJ
Model Number:4H-N
Minimum Order Quantity:1pcs
Delivery Time:1-6weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
Supplier`s last login times:
within 38 hours
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Product Details
Double Side Polish Silicon Carbide Wafer 2-8'' 4H N - Doped SiC Wafers/8inch 200mm N-type SiC Crystal Wafers Ingots SiC substrate/2inch/3inch/4inch/6inch/8inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
Description of SIC Wafer
| 4 inch Conductive SiC Wafer Specification | ||||
| Product | 4H-SiC | |||
| Grade | Grade I | Grade II | Grade III | |
| polycrystalline areas | None permitted | None permitted | <5% | |
| polytype areas | None permitted | ≤20% | 20% ~ 50% | |
| Micropipe Density) | < 5micropipes/cm-2 | < 30micropipes/cm-2 | <100micropipes/cm-2 | |
| Total usable area | >95% | >80% | N/A | |
| Diameter | 100.0 mm +0/-0.5 mm | |||
| Thickness | 500 μm ± 25 μm or Customer Specification | |||
| Dopant | n type: nitrogen | |||
| Primary Flat Orientation) | Perpendicular to <11-20> ± 5.0° | |||
| Primary Flat Length | 32.5 mm ± 2.0 mm | |||
| Secondary Flat Orientation) | 90° CW from Primary flat ± 5.0° | |||
| Secondary Flat Length) | 18.0 mm ± 2.0 mm | |||
| On axis Wafer Orientation) | {0001} ± 0.25° | |||
| Off axis Wafer Orientation | 4.0° toward <11-20> ± 0.5° or Customer Specification | |||
| TTV/BOW/Warp | < 5μm / <10μm /< 20μm | |||
| Resistivity | 0.01~0.03 Ω×cm | |||
| Surface Finish | C Face polish.Si Face CMP (Si face: Rq < 0.15 nm) or Customer Specification | Double side polish | ||
CATALOGUE COMMON SIZE
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots 8 inch 4H N-Type |
2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer 8 inch 4H Semi-insulating SiC wafer |
SiC Applications
Application areas
1:High frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2:Optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100% deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
8 Inch 200mm N Type Silicon Carbide Wafer Crystal Ingots SiC Substrate
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