2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers
Brand Name:zmkj
Model Number:Indium arsenide (InAs)
Minimum Order Quantity:3pcs
Delivery Time:2-4weeks
Payment Terms:T/T, Western Union
Place of Origin:CHINA
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Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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within 38 hours
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Product Details
2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor
InAsSb/In-AsPSb, InNAsSb and other heterojunction materials can be grown on InAs single crystal as the substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can also be epitaxially grown by using InAs single crystal substrate. Mid-infrared quantum cascade laser. These infrared devices have good application prospects in the fields of gas monitoring, low-loss fiber communication, etc. In addition, InAs single crystals have high electron mobility and are ideal materials for making Hall devices.
Applications:
InAs single crystal can be used as a substrate material to grow a
heterostructure material such as InAsSb/InAsPSb or InAsPSb to
fabricate an infrared light-emitting device having a wavelength of
2-12 μm. The InAsPSb superlattice structure material can also be
epitaxially grown by using InAs single crystal substrate to
fabricate a mid-infrared quantum cascade laser. These infrared
devices have good application prospects in the field of gas
detection and low loss fiber communication. In addition, InAs
single crystals have high electron mobility and are an ideal
material for making Hall devices.
Features:
1. The crystal is grown by liquid-sealed straight-drawing
technology (LEC), with mature technology and stable electrical
performance.
2, using X-ray directional instrument for precise orientation, the
crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP)
technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product
processing
| crystal | dope | type | Ion carrier concentration cm-3 | mobility(cm2/V.s) | MPD(cm-2) | SIZE | |
| InAs | un-dope | N | 5*1016 | ³2*104 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| InAs | Sn | N | (5-20) *1017 | >2000 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| InAs | Zn | P | (1-20) *1017 | 100-300 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| InAs | S | N | (1-10)*1017 | >2000 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized | ||||||
| ra | Surface roughness(Ra):<=5A | ||||||
| polish | single or doubles side polished | ||||||
| package | 100 grade cleaning plastic bag in 1000 cleaning room | ||||||
---FAQ –
Q: Are you trading company or manufacturer ?
A: zmkj is a trading company but have a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of
applications.
Q: How long is your delivery time?
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
A: Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
A: Payment<=1000USD, 100% in advance. Payment>=1000USD,
50% T/T in advance ,balance before shippment.
If you have another question, pls feel free to contact us as below:
2-4inch N/P TYPE Semiconductor Substrate InAs Monocrystalline Crystal Substrates Wafers
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