2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
Brand Name:zmkj
Model Number:4inch SEMI
Minimum Order Quantity:5pcs
Delivery Time:2-4weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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within 38 hours
Product Details
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Product Details
2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs Wafer
Product Description
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
GaAs Wafer Feature and Application
| Feature | Application field |
|---|---|
| High electron mobility | Light emitting diodes |
| High frequency | Laser diodes |
| High conversion efficiency | Photovoltaic devices |
| Low power consumption | High Electron Mobility Transistor |
| Direct band gap | Heterojunction Bipolar Transistor |
PRODUCT DESCRIPTION
Specifications of semi-conducting GaAs wafer
Growth Method | VGF | |||
Dopant | p-type: Zn | n-type: Si | ||
Wafer Shape | Round (dia: 2", 3", 4", 6") | |||
Surface Orientation * | (100)±0.5° | |||
* Other Orientations maybe available upon request | ||||
Dopant | Si (n-type) | Zn (p-type) | ||
Carrier Concentration (cm-3) | ( 0.8-4) × 1018 | ( 0.5-5) × 1019 | ||
Mobility (cm2/V.S.) | ( 1-2.5) × 103 | 50-120 | ||
Etch Pitch Density (cm2) | 100-5000 | 3,000-5,000 | ||
Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 | |
Thickness (µm) | 350±25 | 625±25 | 625±25 | |
TTV [P/P] (µm) | ≤ 4 | ≤ 4 | ≤ 4 | |
TTV [P/E] (µm) | ≤ 10 | ≤ 10 | ≤ 10 | |
WARP (µm) | ≤ 10 | ≤ 10 | ≤ 10 | |
OF (mm) | 17±1 | 22±1 | 32.5±1 | |
OF / IF (mm) | 7±1 | 12±1 | 18±1 | |
Polish* | E/E, | E/E, | E/E, | |
Specifications of semi-insulating GaAs wafer
Growth Method | VGF | |||
Dopant | SI Type: Carbon | |||
Wafer Shape | Round (DIA: 2", 3", 4", 6") | |||
Surface Orientation * | (100)±0.5° | |||
* Other Orientations maybe available upon request | ||||
Resistivity (Ω.cm) | ≥ 1 × 107 | ≥ 1 × 108 | ||
Mobility (cm2/V.S) | ≥ 5,000 | ≥ 4,000 | ||
Etch Pitch Density (cm2) | 1,500-5,000 | 1,500-5,000 | ||
Wafer Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 | 150±0.3 |
Thickness (µm) | 350±25 | 625±25 | 625±25 | 675±25 |
TTV [P/P] (µm) | ≤ 4 | ≤ 4 | ≤ 4 | ≤ 4 |
TTV [P/E] (µm) | ≤ 10 | ≤ 10 | ≤ 10 | ≤ 10 |
WARP (µm) | ≤ 10 | ≤ 10 | ≤ 10 | ≤ 15 |
OF (mm) | 17±1 | 22±1 | 32.5±1 | NOTCH |
OF / IF (mm) | 7±1 | 12±1 | 18±1 | N/A |
Polish* | E/E, | E/E, | E/E, | E/E, |
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first
weight) + USD12.0/kg
Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade
Assurance on Alibaba and etc..
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics
Q: Do you have inspection report for material?
We can supply detail report for our products.
Packaging – Logistcs
we concern each details of the package , cleaning, anti-static ,
shock treatment . According to the quantity and shape of the
product ,
we will take a different packaging process!
2INCH 3INCH 4Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED
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