6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
Brand Name:ZMKJ
Model Number:6inch sic
Minimum Order Quantity:1pcs
Delivery Time:1-6weeks
Payment Terms:T/T, Western Union, MoneyGram
Place of Origin:CHINA
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Location:
Shanghai Shanghai China
Address:
Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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within 38 hours
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Product Details
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs
1. The specification
| 6 inch diameter, Silicon Carbide (SiC) Substrate Specification | ||||||||
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||
| Diameter | 150.0 mm±0.2mm | |||||||
| ThicknessΔ | 350 μm±25μm or 500±25un | |||||||
| Wafer Orientation | Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI | |||||||
| Primary Flat | {10-10}±5.0° | |||||||
| Primary Flat Length | 47.5 mm±2.5 mm | |||||||
| Edge exclusion | 3 mm | |||||||
| TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | |||||||
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤100 cm-2 | ||||
| Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||||||
| 4/6H-SI | ≥1E5 Ω·cm | |||||||
| Roughness | Polish Ra≤1 nm | |||||||
| CMP Ra≤0.5 nm | ||||||||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤2% | Cumulative area ≤5% | |||||
| Polytype Areas by high intensity light | None | Cumulative area≤2% | Cumulative area≤5% | |||||
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||
| Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||
| Contamination by high intensity light | None | |||||||
About our ZMKJ Company
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai,
Which is the best city of China, and our factory is founded in Wuxi city in 2014.
We specialize in processing a varity of materials into wafers,
substrates and custiomized optical glass parts.components widely
used in electronics, optics, optoelectronics and many other fields.
We also have been working closely with many domestic and oversea
universities, research institutions and companies, provide
customized products and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all
customers by our good reputatiaons.
CATALOGUE COMMON SIZE
4H-N Type / High Purity SiC wafer 2 inch 4H N-Type SiC wafer 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer 6 inch 4H N-Type SiC wafer | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer |
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Sales & Customer Service
Materials Purchasing
The materials purchasing department is responsible to gather all the raw materials needed to produce your product. Complete traceability of all products and materials, including chemical and physical analysis are always available.
Quality
During and after the manufacture or machining of your products ,quality control department is involved in making sure that all materials and tolerances meet or exceed your specification.
Service
We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.
we are at your side by any time when you have problem,and resolve it in 10hours.
6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized
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