HXY4441 30V P-Channel MOSFET
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:HXY4441
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Shenzhen Guangdong China
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Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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HXY4441 30V P-Channel MOSFET
Description
A. The value of RθJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The value in any given application depends on the user's
specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s
junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature
TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles
to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to
lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
<300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal
impedence which is measured with the device mounted on 1in2 FR-4
board with 2oz. Copper, assuming a maximum junction temperature of
TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
HXY4441 30V P-Channel MOSFET
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