3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP4434AGYT-HF
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:Western Union, L/C, T/T
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips
Description
AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Continuous Drain Current3, VGS @ 4.5V | 10.8 | A |
| ID@TA=70℃ | Continuous Drain Current3, VGS @ 4.5V | 8.6 | A |
| IDM | Pulsed Drain Current1 | 40 | A |
| PD@TA=25℃ | Total Power Dissipation3 | 3.13 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
hermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-c | Maximum Thermal Resistance, Junction-case | 4 | ℃/W |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 40 | ℃/W |
AP4434AGYT-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=7A | - | - | 18 | mΩ |
| VGS=2.5V, ID=4A | - | - | 25 | mΩ | ||
| VGS=1.8V, ID=1A | - | - | 34 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.25 | - | 1 | V |
| gfs | Forward Transconductance | VDS=10V, ID=7A | - | 29 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=7A VDS=10V VGS=4.5V | - | 12.5 | 20 | nC |
| Qgs | Gate-Source Charge | - | 1.5 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 4.5 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V ID=1A RG=3.3Ω VGS=5V | - | 10 | - | ns |
| tr | Rise Time | - | 10 | - | ns | |
| td(off) | Turn-off Delay Time | - | 24 | - | ns | |
| tf | Fall Time | - | 8 | - | ns | |
| Ciss | Input Capacitance | VG.S=0V VDS=10V f=1.0MHz | - | 800 | 1280 | pF |
| Coss | Output Capacitance | - | 165 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 145 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 1.5 | 3 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=2.6A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=7A, VGS=0V, dI/dt=100A/µs | - | 20 | - | ns |
| Qrr | Reverse Recovery Charge | - | 10 | - | nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad.
3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK
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