G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP6982GN2-HF
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
G2012 20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF
Description:
AP6982 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | +8 | V |
| ID@TA=25℃ | Continuous Drain Current3 @ VGS=4.5V | 11 | A |
| ID@TA=70℃ | Continuous Drain Current3 @ VGS=4.5V | 8.7 | A |
| IDM | Pulsed Drain Current1 | 40 | A |
| PD@TA=25℃ | Total Power Dissipation3 | 2.4 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Thermal Data
| Symbol | Parameter | Value | Unit |
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 52 | ℃/W |
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=10A | - | 9.3 | 12.5 | mΩ |
| VGS=2.5V, ID=5A | - | 11.3 | 16 | mΩ | ||
| VGS=1.8V, ID=2A | - | 15 | 21 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | 0.3 | 0.5 | 1 | V |
| gfs | Forward Transconductance | VDS=5V, ID=10A | - | 34 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V | - | - | 10 | uA |
| IGSS | Gate-Source Leakage | VGS=+8V, VDS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=10A VDS=10V VGS=4.5V | - | 22 | 35.2 | nC |
| Qgs | Gate-Source Charge | - | 2.5 | - | nC | |
| Qgd | Gate-Drain ("Miller") Charge | - | 7 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=10V | - | 9 | - | ns |
| tr | Rise Time | ID=1A | - | 13 | - | ns |
| td(off) | Turn-off Delay Time | RG=3.3Ω | - | 40 | - | ns |
| tf | Fall Time | VGS=5V | - | 10 | - | ns |
| Ciss | Input Capacitance | VGS=0V VDS=10V f=1.0MHz | - | 1500 | 2400 | pF |
| Coss | Output Capacitance | - | 170 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 155 | - | pF | |
| Rg | Gate Resistance | f=1.0MHz | - | 2 | 4 | Ω |
Source-Drain Diode
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VSD | Forward On Voltage2 | IS=2A, VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=10A, VGS=0V, dI/dt=100A/µs | - | 11 | - | ns |
| Qrr | Reverse Recovery Charge | - | 5 | - | nC |
Notes:
1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.
This product is sensitive to electrostatic discharge, please handle with care.
This product is not authorized to be used as a critical component of a life support system or other similar systems.
APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.
APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.
G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF
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