AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP50N10D
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location: Shenzhen Guangdong China
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor


Dual Mosfet Switch applications


Switch Mode Power Supplies (SMPS)

Residential, commercial, architectural and street lighting

DC-DC converters

Motor control

Automotive applications


Dual Mosfet Switch Description:


The AP50N10D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.


Dual Mosfet Switch Features


VDS = 100V ID =50A
RDS(ON) < 25mΩ@ VGS=10V


Package Marking and Ordering Information


Product IDPackMarkingQty(PCS)
AP50N10DTO-252AP50N10D XXX YYYY2500

Absolute Maximum Ratings (TC=25unless otherwise noted)


SymbolParameterLimitUnit
VDSDrain-Source Voltage100V
VGSGate-Source Voltage±20V
IDDrain Current-Continuous50A
I (100℃)Drain Current-Continuous(TC=100℃)21A
IDMPulsed Drain Current70A
PDMaximum Power Dissipation85W
Derating factor0.57W/℃
EASSingle pulse avalanche energy (Note 5)256mJ
TJ,TSTGOperating Junction and Storage Temperature Range-55 To 175
RθJCThermal Resistance, Junction-to-Case (Note 2)1.8℃/W

Electrical Characteristics (TC=25unless otherwise noted)


SymbolParameterConditionMinTypMaxUnit
BVDSSDrain-Source Breakdown VoltageVGS=0V ID=250μA100-V
IDSSZero Gate Voltage Drain CurrentVDS=100V,VGS=0V--1μA
IGSSGate-Body Leakage CurrentVGS=±20V,VDS=0V--±100nA
VGS(th)Gate Threshold VoltageVDS=VGS,ID=250 μA13V
RDS(ON)

Drain-Source On-State

Resistance

VGS=10V, ID=20A-2428mΩ
RDS(ON)

Drain-Source On-State

Resistance

VGS=4.5V, ID=10A-2830mΩ
gFSForward TransconductanceVDS=5V,ID=10A-15-S
ClssInput CapacitanceVDS=25V,VGS=0V,
F=1.0MHz
-2000-PF
CossOutput Capacitance-300-PF
CrssReverse Transfer Capacitance-250-PF
td(on)Turn-on Delay TimeVDD=50V,RL=5Ω
VGS=10V,RGEN=3Ω
-7-nS

r

t

Turn-on Rise Time-7-nS
td(off)Turn-Off Delay Time-29-nS

f

t

Turn-Off Fall Time-7-nS
QgTotal Gate ChargeVDS=50V,ID=10A,
VGS=10V
-39-nC
QgsGate-Source Charge-8-nC
QgdGate-Drain Charge-12-nC
VSDDiode Forward Voltage (Note 3)VGS=0V,IS=20A--1.2V

S

I

Diode Forward Current (Note 2)---30A

rr

t

Reverse Recovery Time

TJ = 25°C, IF = 10A

di/dt = 100A/μs(Note3)

-32-nS
QrrReverse Recovery Charge-53-nC
tonForward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by

LS+LD)


Notes:

1,Repetitive Rating: Pulse width limited by maximum junction temperature.

2,Surface Mounted on FR4 Board, t ≤ 10 sec.

3,Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

4,Guaranteed by design, not subject to production

5,EAS Condition : Tj=25 ℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω, IAS=32A


Attention


1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

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