AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters

Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:AP25N10X
Minimum Order Quantity:Negotiation
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location: Shenzhen Guangdong China
Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details

AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters


Mosfet Power Transistor Description:


AP25N10X use advanced VD MOST technology to
provide low RDS(ON), low gate charge, fast switching
This device is specially designed to get better ruggedness
and suitable to use in
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity or Invertors


Mosfet Power Transistor Features


VDS =100V I D =25 A
RDS(ON) < 55mΩ @ VGS=10V
RDS(ON) < 85mΩ @ VGS=4.5V


Mosfet Power Transistor Application


Consumer electronic power supply Motor control
Synchronous-rectification Isolated DC
Synchronous-rectification applications


Package Marking and Ordering Information


Product IDPackMarkingQty(PCS)
AP25N10SSOP-8AP25N10S XXX YYYY3000
AP25N10DTO-252-3AP25N10D XXX YYYY2500

Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)


SymbolParameterRatingUnits
VDSDrain-Source Voltage100V
VGSGate-Source Voltage+20V
ID@TC=25℃Drain Current, VGS @ 10V25A
ID@TC=100℃Drain Current, VGS @ 10V15A
IDMPulsed Drain Current160A
PD@TC=25℃Total Power Dissipation44.6W
PD@TA=25℃Total Power Dissipation2W
T STGStorage Temperature Range-55 to 150
T JOperating Junction Temperature Range-55 to 150

Rthj-cMaximum Thermal Resistance, Junction-case2.8℃/W
Rthj-a

Maximum Thermal Resistance, Junction-ambient

(PCB mount)

62.5℃/W

Electrical Characteristics@Tj=25 C(unless otherwise specified)

SymbolParameterTest ConditionsMin.Typ.Max.Units
BVDSSDrain-Source Breakdown VoltageVGS =0V, ID =250uA100--V
RDS(ON)

Static Drain-Source On-

Resistance2

VGS =10V, I =12A--55
VGS =5V, ID =8A--85
VGS(th)Gate Threshold VoltageVDS =VGS , ID =250uA0.9-2.5V
gfsForward TransconductanceVDS =10V, I =12A-14-S
IDSSDrain-Source Leakage CurrentVDS =80V, VGS =0V--25uA
IGSSGate-Source LeakageVGS = +20V, VDS =0V--+100nA
QgTotal Gate Charge2ID=12A-13.521.6nC
QgsGate-Source Charge-3-nC
QgdGate-Drain ("Miller") Charge-9-nC
td(on)Turn-on Delay Time2VDS =50V-6.5-ns
trRise Time-18-ns
td(off)Turn-off Delay Time-20-ns
tfFall Time-5-ns
CissInput Capacitance

VGS =0V

VDS =25V

-8401340pF
CossOutput Capacitance-115-pF
CrssReverse Transfer Capacitance-80-pF
RgGate Resistancef=1.0MHz-1.6-Ω
VSDForward On Voltage2IS=12A, VGS =0V--1.3V
trrReverse Recovery Time2

IS=12A, VGS =0V

dI/dt=100A/µs

-40-ns
QrrReverse Recovery Charge-70-nC
SymbolParameterTest ConditionsMin.Typ.Max.Units
BVDSSDrain-Source Breakdown VoltageVGS =0V, ID =250uA100--V
RDS(ON)

Static Drain-Source On-

Resistance2

VGS =10V, I =12A--55
VGS =5V, ID =8A--85
VGS(th)Gate Threshold VoltageVDS =VGS , ID =250uA0.9-2.5V
gfsForward TransconductanceVDS =10V, I =12A-14-S
IDSSDrain-Source Leakage CurrentVDS =80V, VGS =0V--25uA
IGSSGate-Source LeakageVGS = +20V, VDS =0V--+100nA
QgTotal Gate Charge2ID=12A-13.521.6nC
QgsGate-Source Charge-3-nC
QgdGate-Drain ("Miller") Charge-9-nC
td(on)Turn-on Delay Time2VDS =50V-6.5-ns
trRise Time-18-ns
td(off)Turn-off Delay Time-20-ns
tfFall Time-5-ns
CissInput Capacitance

VGS =0V

VDS =25V

-8401340pF
CossOutput Capacitance-115-pF
CrssReverse Transfer Capacitance-80-pF
RgGate Resistancef=1.0MHz-1.6-Ω
VSDForward On Voltage2IS=12A, VGS =0V--1.3V
trrReverse Recovery Time2

IS=12A, VGS =0V

dI/dt=100A/µs

-40-ns
QrrReverse Recovery Charge-70-nC

Notes:


1. Pulse width limited by Max. junction temperature. 2.Pulse test

3.Surface mounted on 1 in

2 copper pad of FR4 board


Attention


1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.


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AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters

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