TIP112 Field Effect Transistor , High Frequency Transistor
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:TIP112
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN)
FEATURE
- High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
- Low Collector-Emitter Saturation Voltage
- Industrial Use
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 100 | V |
| VCEO | Collector-Emitter Voltage | 100 | V |
| VEBO | Emitter-Base Voltage | 5 | V |
| IC | Collector Current -Continuous | 2 | A |
| PC | Collector Power Dissipation | 2 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55 to +150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=10mA,IE=0 | 100 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=30mA,IB=0(SUS) | 100 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10mA,IC=0 | 5 | V | ||
| Collector cut-off current | ICEO | VCE=50V,IB=0 | 2 | mA | ||
| Collector cut-off current | ICBO | VCB=100V,IE=0 | 1 | mA | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 2 | mA | ||
DC current gain | hFE(1) | VCE=4V,IC=1A | 1000 | 12000 | ||
| hFE(2) | VCE=4V,IC=2A | 500 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=2A,IB=8mA | 2.5 | V | ||
| Base-emitter voltage | VBE | VCE=4V,IC=2A | 2.8 | V | ||
| Collector output capacitance | Cob | VCB=10V,IE=0,f=0.1MHz | 100 | pF |
TO-220-3L Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 2.520 | 2.820 | 0.099 | 0.111 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| E1 | 12.060 | 12.460 | 0.475 | 0.491 |
| e | 2.540 TYP | 0.100 TYP | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.590 | 2.890 | 0.102 | 0.114 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 13.400 | 13.800 | 0.528 | 0.543 |
| L1 | 3.560 | 3.960 | 0.140 | 0.156 |
| Φ | 3.735 | 3.935 | 0.147 | 0.155 |
TIP112 Field Effect Transistor , High Frequency Transistor
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