3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:3DD13002B
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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Product Details
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)
FEATURE
Power Switching Applications
MARKING
13002B=Device code
Solid dot=Green molding compound device, if none,the normal device
XXX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| 3DD13002B | TO-92 | Bulk | 1000pcs/Bag |
| 3DD13002B-TA | TO-92 | Tape | 2000pcs/Box |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 600 | V |
| VCEO | Collector-Emitter Voltage | 400 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 0.8 | A |
| PC | Collector Power Dissipation | 0.9 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55 ~ 150 | ℃ |
ELECTRICAL CHARACTERISTICS
Ta=25 Š unless otherwise specified
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=100μA,IE=0 | 600 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA,IC=0 | 6 | V | ||
Collector cut-off current | ICBO | VCB= 600V,IE=0 | 100 | µA | ||
| ICEO | VCE= 400V,IB=0 | 100 | µA | |||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 100 | µA | ||
Dc c urrent gain | hFE1 | VCE= 10 V, IC=200mA | 9 | 40 | ||
| hFE2 | VCE= 10 V, IC=0.25mA | 5 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=200mA, IB=40mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=200mA, IB=40mA | 1.1 | V | ||
Transition frequency | fT | VCE=10V, IC=100mA f =1MHz | 5 | MHz | ||
| Fall time | tf | IC=1A, IB1=-IB2=0.2A VCC=100V | 0.5 | µs | ||
| Storage time | ts | 2.5 | µs |
CLASSIFICATION OF hFE(2)
| Range | 9-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 |
Typical Characteristics
TO-92 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| Φ | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
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