D965 NPN Transistor Circuit , NPN Power Transistor High Performance
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:D965
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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within 14 hours
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Product Details
TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)
FEATURE
Ÿ Audio Amplifier
Ÿ Flash Unit of Camera
Ÿ Switching Circuit
MARKING
D965=Device code
Solid dot=Green molding compound device,
if none,the normal device
Z=Rank of hFE, XXX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| D965 | TO-92 | Bulk | 1000pcs/Bag |
| D965-TA | TO-92 | Tape | 2000pcs/Box |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Para meter | Value | Unit |
| VCBO | Collector-Base Voltage | 42 | V |
| VCEO | Collector-Emitter Voltage | 22 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 5 | A |
| PD | Collector Power Dissipation | 750 | mW |
| R0 JA | Thermal Resist ance f rom Junction to Ambient | 166.7 | Š / W |
| Tj | Junction Temperature | 150 | Š |
| Tstg | St orage Temperature | -55 ~+150 | Š |
ELECTRICAL CHARACTERISTICS
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | IC=0.1mA, IE=0 | 42 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 22 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 10µA, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=30V,IE=0 | 0.1 | µA | ||
| Emitter cut-off current | IEBO | VEB=6V, IC=0 | 0.1 | µA | ||
DC current gain | hFE(1) | VCE=2V, IC= 0.15 mA | 150 | |||
| hFE(2) | VCE= 2V,IC = 500 mA | 340 | 2000 | |||
| hFE(3) | VCE=2V, IC = 2A | 150 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=3000mA,IB=100 mA | 0.35 | V | ||
| Transition frequency | fT | VCE=6V, IC=50mA,f=30MHz | 150 | MHz |
CLASSIFICATION OF hFE(2)
| Rank | R | T | V |
| Range | 340-600 | 560-950 | 900-2000 |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| 0 | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
D965 NPN Transistor Circuit , NPN Power Transistor High Performance
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