HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:HXY4606
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
Contact Now
Add to Cart
Active Member
Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
Supplier`s last login times:
within 14 hours
Product Details
Company Profile
Product Details
HXY4606 30V Complementary MOSFET
Description
The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
P-Channel Electrical Characteristics (TJ=25°C unless otherwise
noted)
A. The value of RθJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The
value in any given application depends on the user's specific board
design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s
junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature
TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles
to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to
lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
<300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal
impedence which is measured with the device mounted on 1in2 FR-4
board with
2oz. Copper, assuming a maximum junction temperature of
TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY
LIABILITY ARISINOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.
AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND
RELIABILITY WITHOUT NOTICE.
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m
Inquiry Cart
0