Sapphire Wafer C-Plane to A 1°off 99.999% Al2O3 Dia 2"3"4"6"8" customize thickness

Brand Name:zmsh
Place of Origin:China
Orientation:C Plane (0001) to A(11-20) 1°off
Matarial:99.999% Sapphire Crystal
TTV:<15um
Bow:<50um
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Location: Shanghai Shanghai China
Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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Sapphire Wafer – C-Plane to A 1° Off, 99.999% Al₂O₃, Diameter 2"/3"/4"/6"/8", Custom Thickness


This high-precision sapphire wafer features a C-plane to A-axis 1° off-cut orientation and 99.999% (5N) purity, optimized for superior epitaxial growth in advanced optoelectronic and semiconductor applications. Available in standard diameters (2" to 8") with customizable thicknesses, it provides exceptional crystallographic uniformity, ultra-low defect density, and outstanding thermal/chemical stability. The controlled 1° off-cut angle enhances GaN and AlN epitaxy by reducing step-bunching defects, making it ideal for high-performance LEDs, laser diodes, power electronics, and RF devices.




Key Features of Sapphire Wafer


Precision Off-Cut Orientation

C-plane to A-axis 1° ±0.1° off-cut, engineered to improve epitaxial film uniformity and minimize defects in GaN-based devices.


Ultra-High Purity (5N Al₂O₃)

99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm, ensuring optimal electrical and optical performance.


Diameters: 2", 3", 4", 6", 8" (±0.1 mm tolerance).

Thickness: 100 µm to 1,500 µm (±5 µm tolerance), tailored for specific applications.


Epi-ready polish: Ra <0.5 nm (front side) for defect-free thin-film deposition.


Thermal stability: Melting point ~2,050°C, suitable for high-temperature processes (MOCVD, MBE).


Optical transparency: >85% transmission (UV to mid-IR: 250 nm–5,000 nm).


Mechanical robustness: 9 Mohs hardness, resistant to chemical etching and abrasion.





Applications of Sapphire Wafer


Optoelectronics

GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and VCSELs.

High-power laser windows: CO₂ and excimer laser components.


Power & RF Electronics

HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers and radar systems.

Schottky diodes and MOSFETs: High-voltage devices for electric vehicles.


Industrial & Defense

IR windows and missile domes: High transparency in harsh environments.

Sapphire sensors: Corrosion-resistant covers for industrial monitoring.


Quantum & Research Technologies

Substrates for superconducting qubits (quantum computing).

SPDC (Spontaneous Parametric Down-Conversion) crystals for quantum optics.


Semiconductor & MEMS

SOI (Silicon-on-Insulator) wafers for advanced ICs.

MEMS pressure sensors requiring chemical inertness.





Specifications


Parameter

Value

Diameter2", 3", 4", 6", 8" (±0.1 mm)
ThicknessCustom (100–1,500 µm ±5 µm)
OrientationC-plane to A 1° ±0.1° off
Purity99.999% (5N Al₂O₃)
Surface Roughness (Ra)<0.5 nm (epi-ready)
Dislocation Density<500 cm⁻²
TTV (Total Thickness Variation)<10 µm
Bow/Warp<15 µm
Optical Transparency250–5,000 nm (>85%)



Q&A


Q1: Can I request a different off-cut angle (e.g., 0.5° or 2°)?
A2: Yes. Custom off-cut angles (0.2°–5°) are available with ±0.1° tolerance.


Q2: What’s the maximum thickness available?
A6: Up to 1,500 µm (1.5 mm) for mechanical stability in high-stress applications.


Q3: How should wafers be stored to prevent contamination?
A10: Store in cleanroom-compliant cassettes or nitrogen cabinets (20–25°C, humidity <40%).


China Sapphire Wafer C-Plane to A 1°off 99.999% Al2O3 Dia 23468 customize thickness supplier

Sapphire Wafer C-Plane to A 1°off 99.999% Al2O3 Dia 2"3"4"6"8" customize thickness

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