Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade
Brand Name:zmsh
Place of Origin:China
Material:SiC Crystal
Type:N
Size:2/3/4/6/8/12
Thickness:500um±50um
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Product Details
4H-N 2/3/4/6/8/12 Inch Silicon Carbide (SiC) Substrate – Prime/Dummy/Research Grade
This product series provides high-purity Silicon Carbide (SiC)
substrates in multiple diameters (2", 3", 4", 6", 8", and 12"),
designed for advanced semiconductor, power electronics, and
optoelectronic applications. Available in Prime (device-grade),
Dummy (process-testing), and Research (experimental) grades, these
substrates feature excellent thermal conductivity (> 400 W/m·K
for SiC), high breakdown voltage, and superior chemical stability.
The Prime Grade ensures ultra-low defect density, making it ideal for high-performance devices like MOSFETs, Schottky diodes, and RF components. The Dummy Grade offers cost-effective solutions for process optimization, while the Research Grade supports academic and industrial R&D in wide-bandgap semiconductor technologies.
With customizable specifications (doping, thickness, polishing), these substrates meet the stringent demands of power electronics, 5G communications, and electric vehicle (EV) applications.
Specifications Table
| Properties | Specifications |
| Material | 4H SiC |
| Packing | Single wafer package |
| Type | N Type |
| Diameter | 150 mm ±0.25 mm (4 inch) |
| Thickness | 500μm ±50 μm |
| Surface roughness (Carbon face) | Ra ≤0.5nm with Carbon face epi-ready |
| Surface roughness (Silicon face) | Optical polished |
| Orientations | 4.0 deg off axis ±0.5deg toward <11-20> |
| MPD | ≤0.5/cm² or less |
| TTV/BOW/Warp | <10μm /<30μm /<30μm |
| FWHM | ≤30 arc-sec or less |
| Primary & Secondary Flat | NOT REQUIRED (No flat grinding) |
| Resistivity | <0.25 ohm.cm |
Applications of SiC Wafers
Our 4H-N substrates are engineered for cutting-edge technologies across multiple industries:
1. Power Electronics
- Electric Vehicles (EVs): High-voltage SiC MOSFETs and inverters
for efficient power conversion.
- Fast Charging Systems: Enables compact, high-efficiency chargers
for EVs and consumer electronics.
- Industrial Motor Drives: Robust performance in high-temperature environments.
2. RF & Wireless Communication
- 5G Base Stations: High-frequency transistors with low signal
loss.
- Radar & Satellite Systems: Enhanced power handling for aerospace
and defense applications.
3. Optoelectronics
- UV LEDs & Lasers: Superior thermal management for high-brightness
applications.
4.Research Technologies
- Wide-Bandgap Semiconductor Research: Fundamental studies on
material properties.
Frequently Asked Questions (FAQ)
1.Can these substrates be customized in terms of doping and thickness?
Yes, we offer N-type (Nitrogen-doped) and P-type (Aluminum-doped) variants with adjustable resistivity. Thickness can range cunstomized too.
2.What is the lead time for orders?
- Standard sizes (2"-6"): 2-4 weeks.
- Large sizes (8"-12"): 4-6 weeks (subject to availability).
3.How should the substrates be stored and handled?
- Store in cleanroom conditions (Class 1000 or better).
- Handle with nitrile gloves to avoid contamination.
- Avoid mechanical stress on edges.
Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade
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