SiC Crystal Seed Wafers Dia 205 203 208 Production Grade PVT/HTCVD Growth

SiC crystal seed wafers Dia 205 203 208 Production Grade PVT/HTCVD growth

​​Silicon Carbide (SiC) Seed Crystal Wafers​​ are the foundational materials for SiC single-crystal growth and device fabrication, produced through cutting, grinding, and polishing of high-purity SiC crystals. These wafers exhibit ​​ultra-high thermal conductivity (4.9 W/cm·K)​​, ​​exceptional breakdown field strength (2–4 MV/cm)​​, ​​wide bandgap (3.2 eV)​​, and ​​chemical inertness​​, making them critical for applications in extreme environments such as aerospace, nuclear energy, and high-power electronics. Serving as the "seed" for crystal growth, their crystallographic orientation (e.g., 4H-SiC polytype), surface flatness, and micropipe density directly influence the quality of downstream ingots and device performance. ZMSH provides ​​2–12-inch SiC seed crystal wafers​​ with diameters of 153mm, 155mm, 203mm, 205mm, and 208mm, catering to semiconductor, renewable energy, and industrial sectors.

Key Features of SiC seed​ wafer

1. Physical and Chemical Superiority​​
​​- Extreme Durability​​: SiC Seed Crystal Wafers withstand temperatures exceeding 1700°C and radiation exposure, ideal for aerospace and nuclear applications.
- ​​Electrical Performance​​: High electron saturation velocity (2.7×10⁷ cm/s) enables high-frequency devices (e.g., 5G RF amplifiers).
- ​​Defect Control​​: Micropipe density <1 cm⁻² and minimal polytype defects ensure uniform ingot growth.

​​2. Advanced Fabrication Processes​​
​​- Crystal Growth​​: SiC Seed Crystal Wafers utilizes ​​Physical Vapor Transport (PVT)​​ or ​​High-Temperature Chemical Vapor Deposition (HTCVD)​​ to precisely control temperature gradients and precursor transport.
- ​​Processing Techniques​​: SiC Seed Crystal Wafers employs multi-wire sawing, diamond grinding, and laser stealth dicing to achieve surface roughness ≤Rz0.1μm and ±0.1mm dimensional accuracy.

​​3. Flexible Specifications​​
​​- Size Diversity​​: SiC Seed Crystal Wafers support 2–12-inch wafers (153–208mm diameter), adaptable to power devices, RF modules, and sensor applications.

Technical specifications of SiC seed wafers

Primary applications of SiC seed​ wafer

1,Semiconductor Industry​​

· ​​Power Devices​​: Enable SiC MOSFETs and diodes for EV inverters, improving efficiency by 10–15% and reducing volume by 50%.
​​· RF Devices​​: SiC Seed Crystal Wafers​​ underpin 5G base station PAs and LNAs for millimeter-wave communication.

​​2,Renewables and Industry​​

​​· Solar/Storage​​: Critical for high-efficiency PV inverters, minimizing energy conversion losses.
· ​​Industrial Motors​​: High-temperature tolerance reduces cooling requirements in high-power drives.

3,​​Emerging Technologies​​

​​· Aerospace​​: Radiation resistance ensures reliability in space-grade electronics.
​​· Quantum Computing​​: High-purity wafers support low-temperature semiconductor quantum bits.

Related products

ZMSH's Competitive Edge in SiC Seed Crystal Wafers

1. ​​Integrated Technical Capabilities​​
​​Growth Mastery​​: Dominates PVT and HTCVD processes, achieving 8-inch wafer small-batch production with industry-leading yield.
​​Customization​​: Offers diameter flexibility (153–208mm) and specialized processing (e.g., trenching, coating).

2. ​​​​Strategic Roadmap​​
​​Technology Innovation​​: Developing ​​liquid-phase epitaxy (LPE)​​ to reduce defects and advancing 12-inch wafer mass production (30% cost reduction by 2025).
​​Market Expansion​​: Collaborating with EV and renewable energy sectors, integrating GaN-on-SiC heterostructures for next-gen systems.

SiC crystal growth furnace PVT/HTCVD method:

ZMSH's SiC crystal growth furnace PVT/HTCVD: