2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade
Brand Name:ZMSH
Certification:rohs
Model Number:SiC 6H-P
Payment Terms:T/T
Place of Origin:CHINA
Price:by case
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Product Description:
2inch 4inch 6inch Sic silicon carbide substrate 6H High P-doped Type Off axis: 4.0°toward Prime Grade Dummy Grade
Silicon carbide (SiC) is a compound semiconductor material composed of silicon (Si) and carbon (C), which has unique physical and chemical properties. 6H-SiC is a polytype of silicon carbide with hexagonal structure and a band gap width of 3.02 eV, which exhibits specific electrical and thermal properties. 6H-P type silicon carbide substrate, in particular 6H-SiC substrate with P-type conductivity, has an off-axis Angle of 4.0°, which helps to optimize the electrical performance and thermal stability of the device.
Features:
1. Wide band gap: 6H-SiC has a band gap width of 3.02 eV, which is significantly wider than silicon (Si) 's 1.1 eV. This characteristic makes 6H-SiC extremely stable in high temperature environments with low current leakage rate, which is suitable for high temperature power electronics.
2. High thermal conductivity: The high thermal conductivity of 6H-SiC helps to better heat
dissipation in high power applications, reduce heat accumulation,
and improve the working efficiency and reliability of the device.
3. High breakdown electric field: 6H-SiC has a high breakdown electric field strength and can withstand higher voltages without breakdown, which is suitable for application in the field of high voltage power electronics.
4. P-type electrical conductivity: P-type Sic substrate has specific electrical properties, its electrons have higher mobility relative to holes, and can obtain lower on-voltage drop, which is conducive to controlling the behavior of the device.
5. Off-axis Angle optimization: The design of the off-axis to 4.0° helps to optimize the
electrical performance and thermal stability of the device and
improve the overall performance of the device.
Technical Parameter:
6 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade | 精选级(Z 级) Zero MPD Production Grade (Z Grade) | 工业级(P 级) Standard Production Grade (P Grade) | 测试级(D 级) Dummy Grade (D Grade) | ||
| 直径 Diameter | 145.5 mm~150.0 mm | ||||
| 厚度 Thickness | 350 μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation | - Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H-P, On axis:〈111〉± 0.5° for 3C-N | ||||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
Applications:
1. Power device:
3C-N silicon carbide substrate is widely used in high current metal oxide semiconductor field effect transistors (MOSFETs) and other power devices, because of its excellent conductivity and high temperature resistance, making it the core material of high voltage and high frequency power electronic equipment.
2. High-frequency communication equipment:
In the field of RF and microwave communication, 3C-N silicon carbide substrate is used to manufacture high performance RF devices because of its high frequency characteristics and low loss characteristics.
3. Optoelectronic equipment:
Due to its high thermal conductivity and optical properties, type 3C-N SIC substrates can be used in optoelectronic leds and other optoelectronic devices.
4. New energy vehicles:
New energy vehicles have an increasing demand for high-efficiency and low-loss power devices, and 3C-N silicon carbide substrates have broad application prospects in this field.
sample display:
FAQ:
1. Q: What is silicon carbide substrate 6H-P off-axis to 4.0°?
A: Silicon carbide substrate 6H-P off-axis to 4.0° refers to the silicon carbide material with 6H crystal structure, its conductive type is P-type, and the cutting direction is 4.0° away from the crystal spindle. This design is designed to optimize the electrical properties and thermal stability of silicon carbide materials to meet the manufacturing needs of high-performance semiconductor devices.
2. Q: What is P type silicon carbide?
A: P-type silicon carbide is a positively charged semiconductor material formed by the incorporation of trivalent elements (such as aluminum or boron), with holes as its main carriers.
Tag: #Sic wafer, #Silicon carbide substrate, #Sic 6H-P type, #Off axis: 4.0° toward, #6H High P-doped Type
2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade
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