Sic Silicon Carbide Substrate 6H-P Type On Axis 0° Mohs Hardness 9.2 For Laser Device
Brand Name:ZMSH
Certification:rohs
Model Number:SiC 6H-P
Payment Terms:T/T
Place of Origin:CHINA
Price:by case
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Product Description:
Sic Silicon carbide substrate 6H-P type on axis 0° Mohs Hardness 9.2 for laser device
6H-P type silicon carbide substrate is a semiconductor material
grown by a special process. Its crystal structure is 6H type,
indicating that its cells have hexagonal symmetry, and each cell
contains a stacking sequence of six silicon atoms and six carbon
atoms. P-type indicates that the substrate has been doped so that
its conductivity is dominated by holes. An axis of 0° refers to the
fact that the crystal orientation of the substrate is 0° in a
specific direction (such as the C-axis of the crystal), which is
usually related to the growth and processing of the crystal.
Features:
- High bandgap: 6H-SiC has a bandgap of about 3.2eV, which is much higher than traditional semiconductor materials such as silicon (Si) and germanium (Ge), which allows it to operate stably in high temperature and high voltage environments.
- High thermal conductivity: 6H-SiC has a thermal conductivity of about 4.9W/m·K (the exact value may vary depending on the material and process), which is much higher than silicon, so it is able to dissipate heat more efficiently and is suitable for high power density applications.
- High hardness and mechanical strength: Silicon carbide materials have very high mechanical strength and toughness, suitable for harsh conditions such as high temperature, high pressure and strong corrosion environment.
- Low resistivity: The silicon carbide substrate treated with P-type doping has low resistivity, which is suitable for the construction of electronic devices such as PN junction.
- Good chemical stability: silicon carbide has good corrosion resistance to a variety of chemical substances and can maintain stability in harsh chemical environments.
Technical Parameter:
4 inch diameter Silicon Carbide (SiC) Substrate Specification
| 等级Grade | 精选级(Z 级) Zero MPD Production Grade (Z Grade) | 工业级(P 级) Standard Production Grade (P Grade) | 测试级(D 级) Dummy Grade (D Grade) | ||
| 直径 Diameter | 99.5 mm~100.0 mm | ||||
| 厚度 Thickness | 350 μm ± 25 μm | ||||
| 晶片方向 Wafer Orientation | Off axis: 2.0°-4.0°toward [1120] ± 0.5° for 4H/6H- | ||||
| 微管密度 ※ Micropipe Density | 0 cm-2 | ||||
| 电 阻 率 ※ Resistivity | p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| 主定位边方向 Primary Flat Orientation | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| 主定位边长度 Primary Flat Length | 32.5 mm ± 2.0 mm | ||||
| 次定位边长度 Secondary Flat Length | 18.0 mm ± 2.0 mm | ||||
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ± 5.0° | ||||
| 边缘去除 Edge Exclusion | 3 mm | 6 mm | |||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| 表面粗糙度 ※ Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹(强光灯观测) Edge Cracks By High Intensity Light | None | Cumulative length ≤ 10 mm, single length≤2 mm | |||
| 六方空洞(强光灯测) ※ Hex Plates By High Intensity Light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | |||
| 多型(强光灯观测) ※ Polytype Areas By High Intensity Light | None | Cumulative area≤3% | |||
| 目测包裹物(日光灯观测) Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% | |||
| 硅面划痕(强光灯观测) # Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | |||
| 崩边(强光灯观测) Edge Chips High By Intensity Light | None permitted ≥0.2mm width and depth | 5 allowed, ≤1 mm each | |||
| 硅面污染物(强光灯观测) Silicon Surface Contamination By High Intensity | None | ||||
| 包装 Packaging | Multi-wafer Cassette or Single Wafer Container | ||||
Notes:
※Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.
Applications:
- Power devices: 6H-P type silicon carbide substrate is the ideal material for manufacturing power devices, such as insulated gate bipolar transistor (IGBT), metal oxide semiconductor field effect transistor (MOSFET), etc. These devices have high efficiency, low loss, high temperature resistance and high frequency characteristics, and are widely used in electric vehicles, inverters, high power amplifiers and other fields.
- For example, in electric vehicles, silicon carbide power devices can significantly improve the power conversion efficiency of drive modules and charging stations, reducing energy consumption and costs.
- Rf devices: Although the 6H-P type silicon carbide substrate is mainly used for power devices, specially treated silicon carbide materials can also be used to manufacture RF devices, such as microwave amplifiers, antennas, etc. These devices are widely used in the fields of communication, radar and satellite communication.
- Other applications: In addition, type 6H-P SIC substrates can also be used to manufacture high-performance electronics in the fields of sensors, LED technology, lasers, and smart grids. These devices can work stably in harsh environments such as high temperature, high pressure and strong radiation, improving the reliability and stability of the system.
Sample display:
FAQ:
1. Q: Compared with type 4H, what are the differences in performance between type 6H-P SIC substrate axis 0°?
A: 6H type silicon carbide compared to 4H type, the crystal structure is different, which may lead to differences in electrical properties, thermal properties and mechanical strength. The 6H-P type axis of 0° generally has more stable electrical properties and higher thermal conductivity, suitable for specific high-temperature, high-frequency applications.
2. Q: What is the difference between 4H and 6H SiC?
A: The main difference between 4H and 6H silicon carbide is their crystal structure, 4H is a tetragonal hexagonal mixed crystal, and 6H is a pure hexagonal crystal.
Tag: #Sic wafer, #silicon carbide substrate, #Sic 6H-P type, #on
axis 0°, #Mohs Hardness 9.2
Sic Silicon Carbide Substrate 6H-P Type On Axis 0° Mohs Hardness 9.2 For Laser Device
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