2/4/6/8inch Sic Silicon Carbide Substrate 4H 6H 3C Type Support Customize Semiconductor Industry Multiple Sizes
Brand Name:zmsh
Model Number:Silicon Carbide
Delivery Time:2-4 weeks
Payment Terms:T/T
Place of Origin:China
Material:Silicon Carbide
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Shanghai Shanghai China
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Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
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Product Details
2/4/6/8inch Sic Silicon Carbide Substrate 4H 6H 3C Type Support Customize Semiconductor Industry Multiple Sizes
Product Description
Silicon carbide substrate is a compound semiconductor single crystal material composed of carbon and silicon, which has the characteristics of large band gap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.
It can effectively break through the physical limits of traditional silicon-based semiconductor devices and their materials, and develop a new generation of semiconductor devices that are more suitable for high pressure, high temperature, high power, high frequency and other conditions.
It has the potential to be widely used in "new infrastructure" fields such as 5G base station construction, UHV, intercity high-speed railway and urban rail transit, new energy vehicles and charging piles, and big data centers.
Types of SiC
SiC substrate is mainly divided into three crystal structures: 4H-SiC, 6H-SiC and 3C-SiC, and the corresponding application scenarios are different.
4H-SiC substrate is favored for its highly symmetrical crystal structure and low defect density, which makes it ideal for manufacturing high-power, high-temperature and high-frequency electronic devices. In the fields of power electronics, RF communications, optoelectronics, and solid-state lighting, 4H-SiC substrates are used to manufacture high-efficiency power converters, high-performance RF amplifiers, and high-brightness leds.
The 6H-SiC substrate exhibits better heat conductivity due to its large interlayer distance, which makes it particularly suitable for electronic devices operating in high temperature and high pressure environments. In aerospace and military technology, 6H-SiC substrates are used to manufacture high-power electronic devices capable of operating under extreme conditions.
3C-SiC is a kind of wide-band gap compound semiconductor with excellent properties such as high breakdown field strength, high saturated electron drift rate and high thermal conductivity. It has important applications in the fields of new energy vehicles, photovoltaic and 5G communication. 3C-SiC has higher carrier mobility, lower interfacial defect state density and higher electron affinity. Using 3C-SiC to fabricate FET can solve the problem of poor device reliability caused by many defects of gate-oxygen interface.
Technical Parameters
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal | 3C-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å | a=4.349 Å |
| Stacking Sequence | ABCB | ABCACB | ABC |
| Mohs Hardness | ≈9.2 | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 | 2.36 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K | 3.8×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 | n=2.615 |
| Dielectric Constant | c~9.66 | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | 3-5 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K | |
| Band-gap | 3.23 eV | 3.02 eV | 2.36 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm | 2-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s | 2.7×107m/s |
Application
1. Semiconductor field: used to manufacture power devices, such as transistors, diodes, etc.
2. High temperature resistant material: with high melting point and good high temperature stability, it can be used to manufacture high temperature parts.
3. Refractory material: can improve the fire resistance.
4. Ceramics: Improve the strength, hardness and wear resistance of ceramics.
5. Aerospace field: It has applications in high-temperature components.
6. Energy field: It can be used for solar cells and wind turbines.
Related Production
FAQ:
1.Q: Do you support customization?
A: Yes, we do. We can customize SiC wafer according to your requirements including material, specifications, size and other parameters.
2.Q: How is the package of SiC substrate?
A: Store in a silver package away from light.
2/4/6/8inch Sic Silicon Carbide Substrate 4H 6H 3C Type Support Customize Semiconductor Industry Multiple Sizes
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