3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade Translucent

3inch HPSI Silicon Carbide SiC Substrate Thickness 500um Prime Grade Dummy Grade Research Grade Translucent

About HPSI

HPSI SiC wafer is an advanced semiconductor material, which is widely used in electronic devices under high power, high frequency and high temperature environment. It has high purity, semi-insulating properties, wide band gap, high thermal conductivity, high temperature resistance.It can be applicated in power electronics, Rf devices, high temperature sensors.

HPSI SiC wafers have become important materials for modern high-tech electronic devices because of their excellent electrical and thermal properties. With the development of technology, its application field will continue to expand.

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Properties of 4H-SEMI SiC

-High purity: HPSI SiC wafer reduce the impact of impurities and improve the performance and reliability of the device.

-Semi-insulating properties: This wafer has good semi-insulating properties, which can effectively suppress parasitic currents and is suitable for high frequency applications.

-Wide band gap: SiC has a wide band gap (about 3.3eV), making it excellent in high temperature, high power and radiation environments.

-High thermal conductivity: silicon carbide has a high thermal conductivity, which helps to dissipate heat and improve the working stability and life of the device.

-High temperature resistance: SiC can work stably at high temperatures and is suitable for applications in extreme environments.

Features of HPSI SiC

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Application of HPSI

-Power electronics: Used to manufacture efficient power converters and inverters, widely used in electric vehicles, renewable energy and power transmission systems.

-Rf devices: In communications and radar systems, SiC wafers can improve signal processing power and frequency response.

-High temperature sensors: High temperature sensors for oil, gas and aerospace.

FAQ

1. Q: What is the difference between SI and SiC?

A: SiC is a wide-band semiconductor with a bandgap width of 2.2 to 3.3 electron volts (eV). Si is a narrow-band semiconductor with a smaller bandgap width of about 1.1 electron volts (eV).

2. Q: Why is silicon carbide so expensive?

A: Because silicon carbide products are difficult in manufacturing. The manufacture of silicon carbide products is difficult and requires complex production processes such as high temperature and high pressure.