ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Brand Name:Anterwell
Certification:new & original
Model Number:ISL9V3040S3ST
Minimum Order Quantity:10pcs
Delivery Time:1 day
Payment Terms:T/T, Western Union, Paypal
Contact Now

Add to Cart

Site Member
Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Supplier`s last login times: within 25 hours
Product Details Company Profile
Product Details

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.


EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49362


Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications


Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at TJ = 25℃

• Logic Level Gate Drive


Device Maximum Ratings TA = 25°C unless otherwise noted

SymbolParameterRatingsUnits
BVCERCollector to Emitter Breakdown Voltage (IC = 1 mA)430V
BVECSEmitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)24V
ESCIS25At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy300mJ
ESCIS150At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy170mJ
IC25Collector Current Continuous, At TC = 25°C, See Fig 921A
IC110Collector Current Continuous, At TC = 110°C, See Fig 917A
VGEMGate to Emitter Voltage Continuous±10V
PDPower Dissipation Total TC = 25°C150W
Power Dissipation Derating TC > 25°C1.0W/°C
TJOperating Junction Temperature Range-40 to 175°C
TSTGStorage Junction Temperature Range-40 to 175°C
TLMax Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)300°C
TpkgMax Lead Temp for Soldering (Package Body for 10s)260°C
ESDElectrostatic Discharge Voltage at 100pF, 1500Ω4kV

Package Symbol


Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
SGB15N60HS1466414+TO-263
SPB20N60S51295412+TO-263
TLE4271-2G1354606+TO-263
T2P50E11024ON16+TO-263
RJP30H2ADPE-00-J316680RENESAS15+TO-263
SI8050JD37152SANKEN13+TO-263
SI-8050SD8028SANKEN13+TO-263
STB20NM50T42057ST12+TO-263
STB30NF10T422440ST11+TO-263
STGB7NC60HDT46436ST16+TO-263
STPS20L45CG10688ST16+TO-263
STTH3002CG11196ST15+TO-263
T1235-800G-TR16188ST05+TO-263
T1635-700G-TR15872ST10+TO-263
T1635-800G-TR11480ST16+TO-263
T835H-6G-TR17672ST11+TO-263
TLE4271G12806INFIENON16+TO-263
SPB21N50C3886016+TO-263
TOP244R-TL16428POWER16+TO-263
STB140NF75T418152ST13+TO-263
STB180N55F318716ST16+TO-263
STPS30L30CG8124ST13+TO-263
STPS30L60CW30036ST04+TO-263
TOP244FN16330POWER15+TO-262
TLE4270D800616+TO-252-5
RFD14N05LSM15566FAIRCHILD16+TO-252
RFD16N05LSM12150FAIRCHILD10+TO-252
RFD3055LESM9A7934FAIRCHILD16+TO-252
TJ3965GRS-1.27788HTC16+TO-252
SPD03N60C31327211+TO-252

China ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor supplier

ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Inquiry Cart 0