SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

Brand Name:anterwell
Certification:new & original
Model Number:STW21NM60N
Minimum Order Quantity:10pcs
Payment Terms:Western Union, T/T, MoneyGram
Place of Origin:original factory
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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Product Details

STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET


General Features



■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE


DESCRIPTION


The STx21NM60N is realized with the second generation. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters


APPLICATIONS


It's very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.



Table 2: Order Codes


SALES TYPEMARKINGPACKAGEPACKAGING
STB21NM60NB21NM60ND2PAKTAPE & REEL
STB21NM60N-1B21NM60NI 2PAKTUBE
STF21NM60NF21NM60NTO-220FPTUBE
STP21NM60NP21NM60NTO-220TUBE
STW21NM60NW21NM60NTO-247TUBE

Table 3: Absolute Maximum ratings


SymbolParameterValueUnit
TO-220 / D2PAK / I 2PAK / TO-247TO-220FP
VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
VGSGate- source Voltage±25V
IDDrain Current (continuous) at TC = 25°C1717 (*)A
IDDrain Current (continuous) at TC = 100°C1010 (*)A
IDM ()Drain Current (pulsed)6464 (*)A
PTOTTotal Dissipation at TC = 25°C14030W
Derating Factor1.120.23W/°C
dv/dt(1)Peak Diode Recovery voltage slope15V/ns
VisoInsulation Winthstand Voltage (DC)-----2500V
TstgStorage Temperature–55 to 150 150°C
TjMax. Operating Junction Temperature

() Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS


Table 4: Thermal Data


TO-220 / D²PAK / I²PAK / TO-247TO-220FP
Rthj-caseThermal Resistance Junction-case Max0.894.21°C/W
Rthj-ambThermal Resistance Junction-ambient Max62.5°C/W
TlMaximum Lead Temperature For Soldering Purpose300°C

Table 5: Avalanche Characteristics


SymbolParameterMax ValueUnit
IASAvalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)8.5A
EASSingle Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V)610mJ


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China SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A supplier

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

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