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• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)
ABSOLUTE MAXIMUM RATINGS(1) |
Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V DC (Note 1) ID −24 Drain current Pulsed (Note 1) IDP −72 A Drain power dissipation (Tc=25°C) PD 30 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 75 mJ Avalanche current IAR −24 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C |
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