2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Stock Offer (Hot Sell)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π−MOSV) 2SK2996

DC−DC Converter, Relay Drive and Motor Drive Applications

Low drain−source ON resistance : R_{DS (ON)} = 0.74 Ω (typ.)

High forward transfer admittance : |Y_fs| = 6.8 S (typ.)

Low leakage current : I_DSS = 100 μA (max) (V_DS = 600 V)

Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Weight: 1.9 g (typ.)

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