NGD8201NG Rectifier Diode Integrated circuit Chip USB Flash Microcontrollers

NGD8201NG Rectifier Diode Integrated circuit Chip USB Flash Microcontrollers

NGD8201NG

Ignition IGBT 20 A, 400 V, N−Channel DPAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• DPAK Package Offers Smaller Footprint for Increased Board Space

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)

Applications

• Ignition Systems

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit Collector−Emitter Voltage VCES 440 V

Collector−Gate Voltage VCER 440 V

Gate−Emitter Voltage VGE 15 V

Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50

ADC AAC Continuous Gate Current IG 1.0 mA

Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA

ESD (Charged−Device Model) ESD 2.0 kV

ESD (Human Body Model) R = 1500 ,

C = 100 pF ESD 8.0 kV ESD (Machine Model) R = 0 , C = 200 pF

ESD 500 V Total Power Dissipation @ TC = 25°C

Derate above 25°C PD 125 0.83 W W/°C

Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C

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