BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

Brand Name:ONSEMI
Certification:Original Factory Pack
Model Number:BSS138LT1G
Minimum Order Quantity:20pcs
Delivery Time:1 Day
Payment Terms:T/T, Western Union,PayPal
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Location: Shenzhen Guangdong China
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
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Power MOSFET 200 mA, 50 V N−Channel SOT−23


Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


Features

• Pb−Free Packages are Available

• Low Threshold Voltage (VGS(th):

0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT−23 Surface Mount Package Saves Board Space


NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.


MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


RatingSymbolValueUnit
Drain−to−Source VoltageVDSS50Vdc
Gate−to−Source Voltage − ContinuousVGS± 20Vdc
Total Power Dissipation @ TA = 25°CPD225mW
Operating and Storage Temperature RangeTJ, Tstg− 55 to 150°C
Thermal Resistance − Junction−to−AmbientRJA556°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 secondsTL260°C

China BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23 supplier

BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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