4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
Brand Name:ANG
Certification:ISO
Model Number:SIC-W05
Minimum Order Quantity:100
Delivery Time:8~10 working days
Payment Terms:T/T, Western Union,Paypal
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Location:
Shenzhen Guangdong China
Address:
Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109
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Product Details
4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
Regarding Silicon Carbide(SiC) Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
SiC Application
1. high frequency and high power electronic devices Schottky
diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2. optoelectronic devices: mainly used in GaN/SiC blue LED
substrate material (GaN/SiC) LED
Specification
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
Diameter | 50.6mm±0.2mm | |||
Thickness | 1000±25um Or other customized thickness | |||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis :
<0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | |||
Micropipe Density | ≤0 cm-2 | ≤2 cm-2 | ≤5 cm-2 | ≤30 cm-2 |
Resistivity 4H-N | 0.015~0.028 Ω•cm | |||
Resistivity 4/6H-SI | ≥1E7 Ω·cm | |||
Primary Flat | {10-10}±5.0° or round shape | |||
Primary Flat Length | 18.5 mm±2.0 mm or round shape | |||
Secondary Flat Length | 10.0mm±2.0 mm | |||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
Edge exclusion | 1 mm | |||
TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||
Roughness | Polish Ra≤1 nm / CMP Ra≤0.5 nm | |||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |
Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |
edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |
Common Size In Stock
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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