Name: dual HVIGBT driver coreSuitable for 3300V dual IGBTsapplication High power UPS SVG
Brand: power-sem
Price: 1 USD

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dual HV-IGBT driver core,Suitable for 3300V dual IGBTs,application High power UPS, SVG

Brand Name:power-sem

Model Number:PSHI 0822-33

Minimum Order Quantity:1pcs

Place of Origin:Beijing, China

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BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Active Member

Location: Beijing Beijing China

Address: 1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200

Supplier`s last login times: within 47 hours

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Product Details Company Profile

Product Details

1.feature

● ASIC dual HV-IGBT driver core
● Suitable for 3300V dual IGBTs
● Half-bridge mode select,also two independent single drives
● Short circuit and over current protection by V_CEsatmonitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
● Error “soft turn-off”
● Dynamic spike restrain
● Driver interlock top/bottom in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±25 Apeak current output
● IGBT gate drive voltage +15V/-9V
● gate drive voltage monitoring(<12.5V,>-7.5V)
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 10kHz
● Error chain function, low level active
● Clearance distance from primary side to secondary side is 35mm

2.parameter

PSHI 0822-33

Absolute Maximum Ratings (Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	550	mA
P_DC/DC	Total power of DC/DC isolation power output	8	W
V_in+	Max.PWM input level (V_inA; V_inB)	V_S+0.5	V
V_in-	Min.PWM input level (V_inA; V_inB)	GND-0.5	V
V_iH	Max. logic signal input voltage (mode select /reset signal and external error )	V_S+0.5	V
I_OC	Max. logic signal output current (Open-collector output current)	10	mA
I_outAV	Output average current per channel	150	mA
I_outPEAK	Output peak current per channel	±25	A
V_CES	IGBT collector-emitter voltage	3300	V
V_{isol IO}	Isolation voltage IN-OUT(5 sec. AC)	8000	V
V_{isol AB}	Isolation voltage IN A-OUT B(5 sec. AC)	6000	V
R_{Gon/off min}	Minimal R_gon/R_goff	1	Ω
Q_out/pulse	Charge per pulse	±10^①	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	10	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperature	-45...+85	℃

Electrical Characteristics (Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load current primary f_SW=0 f_SW=10kHz		80 100			mA
V_IT+	Input high level: 15V level 5V level	12 3.2				V
V_IT－	Input low level: 15V level 5V level			4.5 1.9		V
R_in	Input resistance		33			kΩ
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		650			ns
t_d(off)IO	IN-OUT turn-off delay time		600			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		400			ns
V_CEstat	Reference voltage for V_CEmonitoring	20		40	35	V
V_Level	Logic level (External error input; reset signal; mode select)		+8		+15	V
t_pReset	V_ininput both Low reset time		10			μs
t_TD	Dead time adjusted from factory (half-bridge interlock mode)	.05^②	5			μs
C_PS	Primary to secondary capacitance		10			pf

① This value can be expanded externally (on adapter board )by pins.

② Attention! Pins X_S.8,9 should not connect to power supply V_Sor GND directly, Min.R_TDis 1kΩ and corresponding t_TDis about 0.05μs.

3.application

● Single or bridge circuit
● Medium-voltage converter
● SVG
● Inverter
● High power UPS
● High power high frequency SMPS

Company Profile

Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development of technique innovation,Power-sem has became a leader company in the IGBT driver industry in China.

Power-sem Drives Department specialized in design and manufacture of high-performance IGBT drivers and thyristor drivers. The production bases located in Changping Zhongguancun Science and TechnologyParkwhich is about25kmfrom downtown. On the basis of absorption of foreign advanced technique, Power-sem research and develop ASIC PD031,PD032 special used for IGBT and PDT 01 special used for thyristor modules by combination of ten-year experience and latest control skill in power electronics field, bringing IGBT Application Specific Integrated Circuit (ASIC) to Chinese market for the first time.
With more than 10 series, PSHI-IGBT DRIVER has two main types: Play-plug PCB and Economically Compact ACEE. Power-sem offers intelligent IGBT driving products with peak current up to ±30A, voltage level up to 3300V to customers. Our products line covering high-level, medium-level and low-level market, for applications in electric locomotive, servo control, inversion welder,UPS,communication power supply, induction heating, wind power generation, solar power generation and so on. We have established a strategic alliance with thousands customers, and our products have been sold all over the world

Product Tags:

igbt driver circuit for inverter asi converter inverter igbt mma 200

dual HV-IGBT driver core,Suitable for 3300V dual IGBTs,application High power UPS, SVG

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