SOT-323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current

Brand Name:UCHI
Certification:Completed
Model Number:SS8050W
Minimum Order Quantity:1000PCS
Delivery Time:3weeks
Payment Terms:T/T, Western Union
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Location: Dongguan Guangdong China
Address: Room 810, Unit 2, Building 5, Huixing Commercial Center, Dongsheng Road No.1, Zhongshan Dong, Shilong Town Dongguan, GUANGDONG, 523326 CN
Supplier`s last login times: within 1 hours
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Product Details

SOT-323 high frequency low noise transistor(PNP)


FEATURES
- Collector Current.(IC= 1.5A)
- Complementary To SS8550W.
- Collector dissipation:PC=200mW(TC=25℃)
APPLICATIONS
- High Collector Current.
ORDERING INFORMATION
Type No.:SS8050W
Marking: Y1
Package Code:SOT-323

ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified


ParameterSymbolTest conditionsMINTYPMAXUNIT
Collector-base breakdown voltageV(BR)CBOIC=100μA,IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC=2mA,IB=025V
Emitter-base breakdown voltageV(BR)EBOIE=-100μA,IC=05V
Collector cut-off currentICBOVCB=40V,IE=00.1μA
Collector cut-off currentICEOVCE=20V,IB=00.1μA
Emitter cut-off currentIEBOVEB=5V,IC=00.1μA
DC current gain

hFE

VCE=1V,IC=100mA120400
VCE=1V,IC=800mA40
Collector-emitter saturation voltageVCE(sat)IC=800 mA, IB= 80mA0.5V
Base-emitter saturation voltageVBE(sat)IC=800 mA, IB= 80mA1.2V
Base-emitter voltageVBEVCE=1V IC=10mA1V
Transition frequencyfTVCE=10V, IC= 50mA f=30MHz100MHz

CLASSIFICATION OF hFE(1)


RankLHJ
Range120-200200-350300-400

TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified



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SOT-323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current

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