New Original TSZ121ICT TSZ121 Amplifiers IC , 1CIRC SC70-5 ZERO DRIFT OP AMP

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Model Number:TSZ121SC70-5
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Product Details

New Original TSZ121ICT TSZ121 Amplifiers IC OPAMP ZERO-DRIFT 1CIRC SC70-5


Very high accuracy (5 µV) zero drift micropower 5 V operational amplifiers

Features

Very high accuracy and stability: offset voltage 5 µV max at 25 °C, 8 µV over full temperature range (-40 °C to 125 °C) Rail-to-rail input and output

Low supply voltage: 1.8 - 5.5 V

Low power consumption: 40 µA max. at 5 V

Gain bandwidth product: 400 kHz

High tolerance to ESD: 4 kV HBM

Extended temperature range: -40 to 125 °C Micro-packages: SC70-5, DFN8 2x2, and QFN16 3x3

Benefits
Higher accuracy without calibration
Accuracy virtually unaffected by temperature change
Related products
SeeTSV711orTSV731for continuous-time precision amplifiers
Applications
Battery-powered applications
Portable devices
Signal conditioning
Medical instrumentation
Description
The TSZ12x series of high precision operational amplifiers offer very low input offset voltages with
virtually zero drift.


TSZ121 is the single version, TSZ122 the dual version, and TSZ124 the quad version, with pinouts compatible with industry standards.
The TSZ12x series offers rail-to-rail input and output, excellent speed/power consumption ratio, and 400 kHz gain bandwidth product, while consuming less than 40 µA at 5 V. The devices also feature an ultra-low input bias current.
These features make the TSZ12x family ideal for sensor interfaces, battery-powered applications and portable applications.

Absolute maximum ratings and operating conditions

Table 1: Absolute maximum ratings (AMR)


SymbolParameterValueUnit
VCCSupply voltage(1)6

V

VidDifferential input voltage(2)±VCC
VinInput voltage(3)(VCC-) - 0.2 to (VCC+) + 0.2
IinInput current(4)10mA
TstgStorage temperature-65 to 150°C
TjMaximum junction temperature150

Rthja


Thermal resistance junction to

ambient(5)(6)

SC70-5205

°C/W

SOT23-5250
DFN8 2x257
MiniSO8190
SO8125
QFN16 3x339
TSSOP14100

ESD

HBM: human body model(7)4kV
MM: machine model(8)300V
CDM: charged device model(9)1.5kV
Latch-up immunity200mA

Notes:

(1)All voltage values, except the differential voltage are with respect to the network ground terminal.

(2)The differential voltage is the non-inverting input terminal with respect to the inverting input terminal.

(3)Vcc - Vin must not exceed 6 V, Vin must not exceed 6 V

(4) Input current must be limited by a resistor in series with the inputs.

(5) Rth are typical values.

(6)Short-circuits can cause excessive heating and destructive dissipation.

(7) Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating.

(8)Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 Ω), done for all couples of pin combinations with other pins floating.

(9)Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to ground.


Table 2: Operating conditions


SymbolParameterValueUnit
VCCSupply voltage1.8 to 5.5V
VicmCommon mode input voltage range(VCC-) - 0.1 to (VCC+) + 0.1
ToperOperating free air temperature range-40 to 125°C

3


Electrical characteristics

Table 3: Electrical characteristics at VCC+ = 1.8 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C,

and RL = 10 kΩ connected to VCC/2 (unless otherwise specified)


SymbolParameterConditionsMin.Typ.Max.Unit
DC performance
VioInput offset voltageT = 25 °C15μV
-40 °C < T < 125 °C8
ΔVio/ΔTInput offset voltage drift(1)-40 °C < T < 125 °C1030nV/°C
Iib

Input bias current

(Vout = VCC/2)

T = 25 °C50200(2)

pA

-40 °C < T < 125 °C300(2)
Iio

Input offset current

(Vout = VCC/2)

T = 25 °C100400(2)
-40 °C < T < 125 °C600(2)

CMR

Common mode rejection

ratio, 20 log (ΔVicm/ΔVio),

Vic = 0 V to VCC ,

Vout = VCC/2, RL > 1 MΩ

T = 25 °C110122

dB

-40 °C < T < 125 °C110
AvdLarge signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V)T = 25 °C118135
-40 °C < T < 125 °C110
VOHHigh-level output voltageT = 25 °C30

mV

-40 °C < T < 125 °C70
VOLLow-level output voltageT = 25 °C30
-40 °C < T < 125 °C70

Iout

Isink (Vout = VCC)T = 25 °C78

mA

-40 °C < T < 125 °C6
Isource (Vout = 0 V)T = 25 °C57
-40 °C < T < 125 °C4

ICC

Supply current

(per amplifier, Vout = VCC/2,

RL > 1 MΩ)

T = 25 °C2840

μA

-40 °C < T < 125 °C40
AC performance
GBPGain bandwidth product

RL = 10 kΩ, CL = 100 pF

400kHz
FuUnity gain frequency300
ɸmPhase margin55Degrees
GmGain margin17dB
SRSlew rate(3)0.17V/μs
tsSetting timeTo 0.1 %, Vin = 1 Vp-p, RL = 10 kΩ, CL = 100 pF50μs
enEquivalent input noise voltagef = 1 kHz60nV/√ Hz
f = 10 kHz60
CsChannel separationf = 100 Hz120dB

SymbolParameterConditionsMin.Typ.Max.Unit
tinitInitialization timeT = 25 °C50ps
-40 °C < T < 125 °C100

TSZ121, TSZ122, TSZ124

Notes:

(1)SeeSection 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature.

(2)Guaranteed by design

(3)Slew rate value is calculated as the average between positive and negative slew rates.

Table 4: Electrical characteristics at VCC+ = 3.3 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C,

and RL = 10 connected to VCC/2 (unless otherwise specified)


SymbolParameterConditionsMin.Typ.Max.Unit
DC performance
VioInput offset voltageT = 25 °C15μV
-40 °C < T < 125 °C8
ΔVio/ΔTInput offset voltage drift(1)-40 °C < T < 125 °C1030nV/°C
Iib

Input bias current

(Vout = VCC/2)

T = 25 °C60200(2)

pA

-40 °C < T < 125 °C300(2)
Iio

Input offset current

(Vout = VCC/2)

T = 25 °C120400(2)
-40 °C < T < 125 °C600(2)

CMR

Common mode rejection

ratio, 20 log (ΔVicm/ΔVio),

Vic = 0 V to VCC ,

Vout = VCC/2, RL > 1 MΩ

T = 25 °C115128

dB

-40 °C < T < 125 °C115
AvdLarge signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V)T = 25 °C118135
-40 °C < T < 125 °C110
VOHHigh-level output voltageT = 25 °C30

mV

-40 °C < T < 125 °C70
VOLLow-level output voltageT = 25 °C30
-40 °C < T < 125 °C70

Iout

Isink (Vout = VCC)T = 25 °C1518

mA

-40 °C < T < 125 °C12
Isource (Vout = 0 V)T = 25 °C1416
-40 °C < T < 125 °C10

ICC

Supply current

(per amplifier, Vout = VCC/2,

RL > 1 MΩ)

T = 25 °C2940

μA

-40 °C < T < 125 °C40
AC performance
GBPGain bandwidth product

RL = 10 kΩ, CL = 100 pF

400kHz
FuUnity gain frequency300
ɸmPhase margin56Degrees
GmGain margin19dB
SRSlew rate(3)0.19V/μs
tsSetting timeTo 0.1 %, Vin = 1 Vp-p, RL = 10 kΩ, CL = 100 pF50μs
enEquivalent input noise voltagef = 1 kHz40nV/√ Hz
f = 10 kHz40
CsChannel separationf = 100 Hz120dB
tinitInitialization timeT = 25 °C50μs
-40 °C < T < 125 °C100

Table 5: Electrical characteristics at VCC+ = 5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 ° C, and

RL = 10 kΩ connected to VCC/2 (unless otherwise specified)


SymbolParameterConditionsMin.Typ.Max.Unit
DC performance
VioInput offset voltageT = 25 °C15μV
-40 °C < T < 125 °C8
ΔVio/ΔTInput offset voltage drift(1)-40 °C < T < 125 °C1030nV/°C
Iib

Input bias current

(Vout = VCC/2)

T = 25 °C70200(2)

pA

-40 °C < T < 125 °C300(2)
Iio

Input offset current

(Vout = VCC/2)

T = 25 °C140400(2)
-40 °C < T < 125 °C600(2)

CMR

Common mode rejection

ratio, 20 log (ΔVicm/ΔVio),

Vic = 0 V to VCC ,

Vout = VCC/2, RL > 1 MΩ

T = 25 °C115136

dB

-40 °C < T < 125 °C115

SVR

Supply voltage rejection

ratio, 20 log (ΔVCC/ΔVio),

VCC = 1.8 V to 5.5 V,

Vout = VCC/2, RL > 1 MΩ

T = 25 °C120140
-40 °C < T < 125 °C120
AvdLarge signal voltage gain, Vout = 0.5 V to (VCC - 0.5 V)T = 25 °C120135
-40 °C < T < 125 °C110

EMIRR(3)


EMI rejection rate = -20 log

(VRFpeak/ΔVio)

VRF = 100 mVp , f = 400 MHz84
VRF = 100 mVp , f = 900 MHz87
VRF = 100 mVp , f = 1800 MHz90
VRF = 100 mVp , f = 2400 MHz91
VOHHigh-level output voltageT = 25 °C30

mV

-40 °C < T < 125 °C70
VOLLow-level output voltageT = 25 °C30
-40 °C < T < 125 °C70

Iout

Isink (Vout = VCC)T = 25 °C1518

mA

-40 °C < T < 125 °C14
Isource (Vout = 0 V)T = 25 °C1417
-40 °C < T < 125 °C12

ICC

Supply current

(per amplifier, Vout = VCC/2,

RL > 1 MΩ)

T = 25 °C3140

μA

-40 °C < T < 125 °C40
AC performance
GBPGain bandwidth product

RL = 10 kΩ, CL = 100 pF

400kHz
FuUnity gain frequency300
ɸmPhase margin53Degrees
GmGain margin19dB
SRSlew rate(4)0.19V/μs

SymbolParameterConditionsMin.Typ.Max.Unit
tsSetting timeTo 0.1 %, Vin = 100 mVp-p, RL = 10 kΩ, CL = 100 pF10μs
enEquivalent input noise voltagef = 1 kHz37nV/√ Hz
f = 10 kHz37
CsChannel separationf = 100 Hz120dB
tinitInitialization timeT = 25 °C50μs
-40 °C < T < 125 °C100

Notes:

See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature.

(2)Guaranteed by design

(3)Tested on SC70-5 package

(4)Slew rate value is calculated as the average between positive and negative slew rates.

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