Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM
Brand Name:Micron Technology
Certification:Lead free / RoHS Compliant
Model Number:MT4LC4M16R6TG-5
Minimum Order Quantity:50
Delivery Time:Within 3days
Payment Terms:T/T in advance, Paypal, Western Union
Contact Now
Add to Cart
Verified Supplier
Address:
R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
Supplier`s last login times:
within 1 hours
Product Details
Company Profile
Product Details
Quick Detail:
DRAM
Description:
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MT4LC4M16R6 or 8,192 rows by 512 columns on the MT4LC4M16N3. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MT4LC4M16R6 or 13 row-address bits (A0-A12) and 9 column-address bits (A0-A8) on the MT4LC4M16N3 version. In addition, both byte and word accesses are supported via the two
CAS# pins (CASL# and CASH#).
The CAS# functionality and timing related to address and control functions (e.g., latching column addresses or selecting CBR REFRESH) is such that the internal CAS# signal is determined by the first external
CAS# signal (CASL# or CASH#) to transition LOW and the last to transition back HIGH. The CAS# functionality and timing related to driving or latching data is such that each CAS# signal independently controls the associated eight DQ pins.
The row address is latched by the RAS# signal, then the column address is latched by CAS#. This device provides EDO-PAGE-MODE operation, allowing for fast successive data operations (READ, WRITE or READMODIFY-WRITE) within a given row.
The 4 Meg x 16 DRAM must be refreshed periodically in order to retain stored data.
Applications:
• Single +3.3V ±0.3V power supply
• Industry-standard x16 pinout, timing, functions, and package
• 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3)
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
• Optional self refresh (S) for low-power data retention
Specifications:
part no. | MT4LC4M16R6TG-5 |
Manufacturer | Micron Technology |
supply ability | 10000 |
datecode | 10+ |
package | TSOP |
remark | new and original stock |
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
Why buy from us >>> Fast / Safely / Conveniently
• Mega Source is a Stock keeper and trade company of Electronic
components .Our branches office include China, Hong Kong, Sigapore
, Canada . Offer business, service, resourcing and information for
our global member.
• Goods are ensured the highest quality possible and are delivered
to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport
destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer
don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time
zone difference, please allow up to 24 hours to get your mail
replied. The products were tested by some devices or software, we
ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe
transportation service to global buyer.
Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM
Inquiry Cart
0