AS4C1M16E5-50JC - Alliance Semiconductor Corporation - 5V 1M×16 CMOS DRAM (EDO)
Brand Name:Alliance Semiconductor Corporation
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Model Number:Alliance Semiconductor Corporation
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Quick Detail:
5V 1M×16 CMOS DRAM (EDO)
Description:
The AS4C1M16E5 is a high performance 16-megabit CMOS Dynamic Random
Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The
device is fabricated using advanced CMOS technology and innovative
design techniques resulting in high speed, extremely low power and
wide operating margins at component and system levels. The Alliance
16Mb DRAM family is optimized for use as main memory in personal
and portable PCs, workstations, and multimedia and router switch
applications.
The AS4C1M16E5 features hyper page mode operation where read and
write operations within a single row (or page) can be executed at
very high speed by toggling column addresses within that row. Row
and column addresses are alternately latched into input buffers
using the falling edge of RAS and xCAS inputs, respectively. Also,
RAS is used to make the column address latch transparent, enabling
application of column addresses prior to xCAS assertion. The
AS4C1M16E5 provides dual UCAS and LCAS for independent byte control
of read and write access.
Extended data out (EDO), also known as 'hyper-page mode,' enables
high speed operation. In contrast to 'fast-page mode' devices, data
remains active on outputs after xCAS is de-asserted high, giving
system logic more time to latch the data. Use OE and WE to control
output impedance and prevent bus contention during
read-modify-write and shared bus applications. Outputs also go to
high impedance at the last occurrance of RAS and xCAS going high.
Refresh on the 1024 address combinations of A0 to A9 must be
performed every 16 ms using:
• RAS-only refresh: RAS is asserted while xCAS is held high. Each
of the 1024 rows must be strobed. Outputs remain high impedence.
• Hidden refresh: xCAS is held low while RAS is toggled. Outputs
remain low impedence with previous valid data.
• CAS-before-RAS refresh (CBR): At least one xCAS is asserted prior
to RAS. Refresh address is generated internally.
Outputs are high-impedence (OE and WE are don't care).
• Normal read or write cycles refresh the row being accessed.
The AS4C1M16E5 is available in the standard 42-pin plastic SOJ and
44/50-pin TSOP II packages, respectively. The AS4C1M16E5 device
operates with a single power supply of 5V ± 0.5V and provides TTL
compatible inputs and outputs.
Applications:
• Organization: 1,048,576 words × 16 bits
• High speed
- 45/50/60 ns RAS access time
- 20/20/25 ns hyper page cycle time
- 10/12/15 ns CAS access time
• Low power consumption
- Active: 740 mW max (AS4C1M16E5-60)
- Standby: 5.5 mW max, CMOS DQ
• Extended data out
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh Read-modify-write
• TTL-compatible, three-state DQ
• JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
• 5V power supply (AS4C1M16E5)
• 3V power supply (AS4LC1M16E5)
• Industrial and commercial temperature available
Specifications:
part no. | AS4C1M16E5-50JC |
Manufacturer | Alliance Semiconductor Corporation |
supply ability | 10000 |
datecode | 10+ |
package | 42pin-TSOP |
remark | new and original stock |
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AS4C1M16E5-50JC - Alliance Semiconductor Corporation - 5V 1M×16 CMOS DRAM (EDO)
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