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1 - 10 Results for what is silicon wafer from 907 Products
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite. The beta form is similar to diamond, and is used in a few applications. It has been the preferred choice in power semis for electric vehicles....
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low dislocation density suitable for manufacturing laser diodes to be used as light sources for Blu-ray disc drives or projectors. GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
2 Inch U GaN Substrates SI GaN Substrates 50.8mm
2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
5*10mm2 A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.1 Ω·cm Power Device/Laser W
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. Researchers from North Carolina State University...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
JDCD04-001-007 10x10mm2(010)Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to produce relatively efficient devices, the improved characteristics of gallium nitride give GaN semiconductors the advantage of losing far less energy...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
OEM Single Silicon Wafer Box Shipper Wafer Manufacturing Process
Product Description: Product Overview - Silicon Wafer Box The Silicon Wafer Box, also known as the Wafer Expander Ring Box or Wafer Grip Ring Box, is an essential tool for storing and transporting silicon wafer substrates in a safe and secure manner. It is designed to match various sizes of hoop rings, making it a versatile solution for different wafer sizes. Function The main function of the Silicon Wafer Box is to match hoop rings, ensuring...
Shenzhen Hiner Technology Co.,LTD.
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Building A11,Zone D,West Industrial Zone,Minzhu Community, Shajing Street,Baoan District,Shenzhen City,GD Province CN
IC Silicon Wafer With Flatness <50um No Defects
Product Description: IC Silicon Wafer Our high-quality IC Silicon Wafers are made of superior silicon material and are available in 6-inch, 4-inch, 6-inch and 8-inch SOI wafers. The surface of these IC Silicon Wafers is free from any defects and the resistivity ranges from 1 to 10 ohm. Moreover, the particle density on the surface of these SOI silicon wafers is less than 30 per cm2 and the warp is less than 20um. Our IC Silicon Wafers are widely...
SHANGHAI FAMOUS TRADE CO.,LTD
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Rm5-616,No.851,Dianshanhu avenue, Qingpu area，Shanghai city，CHINA
Test Grade Monocrystalline Silicon Wafer , High Resistivity Silicon Wafer
semiconductor wafer 6inch prime sillicon wafer, sillicon optical lens, IC sillicon substrates , poly sillicon wafer,Semiconductor 3' inch silicon wafer, single crystal ,2inch, 3inch,4inch,5inch,6inch,8inch,12inch silicon wafer, single side polished silicon wafer 1. Description Density 2.4(g/cm3) Dope type no dope doped B doped P Type I P N resistivity Ø 1000Ωcm 10-3~40Ωcm 10-3~40Ωcm E P D ≤100∕cm2 ≤100∕cm2 ≤100∕cm2 Oxygen content (∕cm3) ≤1~1...
SHANGHAI FAMOUS TRADE CO.,LTD
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Rm5-616,No.851,Dianshanhu avenue, Qingpu area，Shanghai city，CHINA
Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor
Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconductor Silicon wafers are thin slices of pure crystalized silicon. These pure forms of wafers are normally called undoped or intrinsic silicon wafer. One of the reasons for using Silicon wafer in semiconductor industry is the natural abundance of Silicon. It is one of the most abundant material found on earth usually found in the form of SiO2. Another reason of using...
Hangzhou Freqcontrol Electronic Technology Ltd.
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Room 1106, CIBC, No.198 Wuxing Rd, Hangzhou, P.R.China
Dia 50.8mm Size IC Silicon Wafer , N Type 300mm Silicon Wafer Si Single Crystal Material
n-type 2inch prime sillicon wafer, sillicon optical lens, IC sillicon substrates , poly sillicon wafer,Semiconductor 3' inch silicon wafer, single crystal ,2inch, 3inch,4inch,5inch,6inch,8inch,12inch silicon wafer, single side polished silicon wafer 1. Description Si is most widely used for lenses and windows in IR systems operating in the 2 - 12 µm range. The enviroment does not make any problems because Germanium is inert, mechanically rugged,...
SHANGHAI FAMOUS TRADE CO.,LTD
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Rm5-616,No.851,Dianshanhu avenue, Qingpu area，Shanghai city，CHINA
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