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EL817 DIP-4 EVERLIGHT Optoisolator Field Effect Transistor Output 5000Vrms 1 Channel

China EL817 DIP-4 EVERLIGHT Optoisolator Field Effect Transistor Output 5000Vrms 1 Channel on sale
EL817 DIP-4 EVERLIGHT Optoisolator Field Effect Transistor Output 5000Vrms 1 Channel Datasheet: EL817 Series Datasheet rev17.pdf EL817 Specifications Part Status Discontinued at Digi-Key Number of Channels 1 Voltage - Isolation 5000Vrms Current Transfer Ratio (Min) 50% @ 5mA Current Transfer Ratio (Max) 600% @ 5mA Turn On / Turn Off Time (Typ) - Rise / Fall Time (Typ) 6µs, 8µs Input Type DC Output Type Transistor Voltage - Output (Max) 80V...
HK HUAYONGLI ELECTRONIC INDUSTRIAL CO.,LIMTED.
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Room 803, Chevalier House, 45-51 Chatham Road South, Tsim Sha Tsui, Kowloon, Hong Kong

P-Channel Logic Level Enhancement Mode Field Effect Transistor STU601S SAMHOP

China P-Channel Logic Level Enhancement Mode Field Effect Transistor STU601S SAMHOP on sale
P-Channel Logic Level Enhancement Mode Field Effect Transistor STU601S SAMHOP Datasheet: STU601S-SamHopMicroelectronics.pdf STU601S Specifications Drain-Source Voltage -60V Gate-Source Voltage ±20V Operating Temperature -55°C ~ 150°C Package TO-252 Place of Origin China Company Profile Shenzhen huayongli Electronic Technology Co., Ltd. (Hong Kong huayongli Electronic Industry Co., Ltd.) is an enterprise approved and registered by the relevant...
HK HUAYONGLI ELECTRONIC INDUSTRIAL CO.,LIMTED.
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Room 803, Chevalier House, 45-51 Chatham Road South, Tsim Sha Tsui, Kowloon, Hong Kong

SBC817-40LT1G - Onsemi -Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)

China SBC817-40LT1G - Onsemi -Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) on sale
The SBC817-40LT1G is a general-purpose NPN bipolar junction transistor that offers a low collector-emitter saturation voltage, high current gain, compact form factor, and RoHS compliance, making it an excellent choice for a wide range of low power applications. Datasheet: BC817-40LT1-D.PDF SBC817-40LT1G Specifications Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 45V Vce...
HK HUAYONGLI ELECTRONIC INDUSTRIAL CO.,LIMTED.
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Room 803, Chevalier House, 45-51 Chatham Road South, Tsim Sha Tsui, Kowloon, Hong Kong

SIEMENS 6SY7000-0AD50 SIMATIC IGBT-TRANSISTOR MODULE

China SIEMENS 6SY7000-0AD50 SIMATIC IGBT-TRANSISTOR MODULE on sale
SIEMENS 6SY7000-0AD50 SIMATIC IGBT-TRANSISTOR MODULE Description Model 6SY7000-0AD50 Brand SIEMENS DataSheet/Catalogue In PDF File Weight 5,500 Kg Condition Normal Description IGBT-Transistor module FZ1800R16KF4, 1800A, 1600V Company Information Wuhan Sean Automation Equipment Co.,Ltd ADD: Building 2, Fanhai International SOHO , Huaihai Road, Jianghan District, Wuhan,China. Main manage distributed : ◈Control system (DCS) ◈Programmable controller...
Wuhan Sean Automation Equipment Co.,Ltd
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Fanhai International SOHO , Huaihai Road, Jianghan District, Wuhan 430023.

FANUC General Electric POWER AMPLIFIER CARD IC3600APAB1 four small circular transistors

China FANUC  General Electric POWER AMPLIFIER CARD IC3600APAB1 four small circular transistors on sale
FANUC General Electric Power amplifying card IC3600APAB1 four small circular transistors Quick Details Part:IC3600APAB1 Manufacturer:General Electric Description:POWER AMPLIFIER CARD Availability:Submit request for datasheets and more information. About GE Fanuc IC3600APAB1 The IC3600APAB1 is a power amplifying card produced by General Electric to be used in their Mark I and Mark II lines. The IC3600APAB1 has four small circular transistors. Two...
Wisdomlong Technology CO.,LTD
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23E BlockB,Lushan Building,Chunfeng Road,Luohu District,Shenzhen,518001,China

2N-Channel IAUC60N04S6N031H 6 Power Transistor 8-PowerVDFN Integrated Circuit Chip

China 2N-Channel IAUC60N04S6N031H 6 Power Transistor 8-PowerVDFN Integrated Circuit Chip on sale
2N-Channel IAUC60N04S6N031H 6 Power Transistor 8-PowerVDFN Integrated Circuit Chip​ Product Description Of IAUC60N04S6N031H IAUC60N04S6N031H is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A. Specification Of IAUC60N04S6N031H Part Number IAUC60N04S6N031H ID (@25°C) max 60 A Operating Temperature min max -55 °C 175 °C Package PG-TDSON-8 QG...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

CSD87351Q5D TI Integrated Small Electronic Components IC Chips transistor LSON-8

China CSD87351Q5D TI Integrated  Small Electronic Components IC Chips transistor LSON-8 on sale
CSD87351Q5D Chipscomponent Electronic Components IC Chips Mosfet-array 30V 32A 12W Surface Mount Type 8-LSON (5x6) Product description: ITEM VALUE D/C NEW Condition Original Package Original Type ICS Brand Original Brand Applications Network Communications Series MCU Description In Stock Warranty 30~90 Days Lead Free Status ROHS Compliant Mounting Type Surface Mount Express DHL.UPS.FEDEX.TNT.EMS Packing Reel/Tube/Tray/Box Sample Support Datasheet...
Shenzhen Xinshengyuan Electronic Technology Co., Ltd.
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2110 Duhui Xuan, No. 3018 Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

MITSUBISHI FX2N-48ET Transistor output unit

China MITSUBISHI FX2N-48ET Transistor output unit on sale
MITSUBISHI FX2N-48ET Manual And Instructions FX2N-48ET datasheetPDF datasheet MITSUBISHI FX2N-48ET Product information and technical parameters: Brand: MITSUBISHI Name: Transistor output unit Model: FX2N-48ET Total input and output points: 48 points. Input points: 24 points. Output points: 24 points. Output type: transistor output. Power supply voltage: AC100-240V. Input signal voltage: DC24V. Developed a range of special function modules to meet...
XIN YAN INDUSTRIAL LIMITED
NO.17 Buliding,Zhongshan JINTING,YueLin Street,Fenghua City,Ningbo, Zhejiang,China

MITSUBISHI FX2N-8EYT Transistor output module

China MITSUBISHI  FX2N-8EYT Transistor output module on sale
MITSUBISHI FX2N-8EYT Manual And Instructions FX2N-8EYT datasheetPDF datasheet MITSUBISHI FX2N-8EYT Product information and technical parameters: Brand: MITSUBISHI Name: Transistor output module Model: FX2N-8EYT Total input and output points: 8 points. Output points: 8 points. Output type: transistor output. FX Series in the compact body built in superior performance, and strive to operate simple. In addition, rich options can meet the various...
XIN YAN INDUSTRIAL LIMITED
NO.17 Buliding,Zhongshan JINTING,YueLin Street,Fenghua City,Ningbo, Zhejiang,China

MITSUBISHI FX2N-8EYT-H Transistor output module

China MITSUBISHI  FX2N-8EYT-H Transistor output module on sale
MITSUBISHI FX2N-8EYT-H Manual And Instructions FX2N-8EYT-H datasheetPDF datasheet MITSUBISHI FX2N-8EYT-H Product information and technical parameters: Brand: MITSUBISHI Name: Transistor output module Model: FX2N-8EYT-H Total input and output points: 8 points. Output points: 8 points. Output type: transistor output. FX2N extension module. The expansion module is an input and output expansion device of the power supply from the basic unit or the...
XIN YAN INDUSTRIAL LIMITED
NO.17 Buliding,Zhongshan JINTING,YueLin Street,Fenghua City,Ningbo, Zhejiang,China
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