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1 - 10 Results for high power rf amplifier from 363226 Products
BS816A-1 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR high power rf transistor
...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power...
Wisdtech Technology Co.,Limited
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Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China
PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors
... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,...
Mega Source Elec.Limited
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R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031
Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor
Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power......
Sichuan Bochen Guosheng Intelligent Technology Co., Ltd.
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NO.29, Hegang Road, Southern District, Modern Industrial Port, Chengdu City 611730, China
High Linearity RF Amplifier 1.8GHz - 2.8GHz Frequency 320mA Operation YP233433
... InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to ......
Shenzhen TeXin electronic Co., Limited
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201, Building A, No.1 Xinghua Road, Pingxi Community, Pingdi Street, Longgang District, Shenzhen
40W Wireless High Power Linear Amplifier With 1dB Power Flatness for 5725-5850MHz
... to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness <1dB Packing & Delivery To better ensure the...
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
AD9361BBCZ High Power Rf Transistor
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD
Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD Quick Detail: Place of Origin : Guangzhou , China Brand name : HLA Model Number: SA-1250 Service Type: OEM or ODM Description: Nowadays, in professional sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers......
Guangzhou langyuan audio equipment co.lt shawan branch
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Durable 4G Broadband HF Amplifier , Practical High Frequency RF Amplifier
... applications. It is small in size (170*110*20mm) and is housed in a durable aluminum case. With its low input/output VSWR of less than 1.8, it offers high linearity and low noise figure of less than 3dB. It supports a wide range of input power of...
Shenzhen Maixintong Technology Co., Ltd
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Building 403,Baoyuan 12,Longhua Avenue 5245,Qinghua Community,Longhua District,Shenzhen
50dBm High Power RF Jamming Module Working Frequency 20MHz~2700MHz
...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly...
EASTLONGE ELECTRONICS(HK) CO.,LTD
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3F./4F., Zhenyingtai Technology Park, Hebei Industry Zone, Longhua New District, Shenzhen 518109, China
ATNJ Customized Wideband 20-700MHz Gan Amplifier Ultra Band High Power Gan Amplifier for 2G 3G 4G 5G
...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also...
Shenzhen Atnj Communication Technology Co., Ltd.
Verified Supplier
Floor 12, Building A, Rd Jiangshi, Quanju High-Tech Industry Park, Guangming District, Shenzhen, Guangdong Province, China
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