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Transistors IPP65R050CFD7A Integrated Circuit Chip 650V Single FETs Transistors TO-220-3
...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ ......
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
SMP3003 Electronic Transistors TO-263-2 SMP3003-DL-1E Integrated Circuit IC Chip
... FETs, MOSFETs Mfr onsemi Series - Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id)...
rongxing international trade co.,limited
Verified Supplier
Room 2409, 24/F, Block A, Hoover Building 38 Kwai Cheong Road, Kwai Chung, Hong Kong. CHINA
Through Hole IC Diode Transistor IRFP460APBF MOSFET 500V N-CH HEXFET
Through Hole Diode Fet Chip IC IRFP460APBF 500V Product description Part number IRFP460APBF is manufactured by Vishay Company and distributed by AYE. As one of the leading distributors of electronic products, we carry many electronic components from the ......
AYE TECHNOLOGY CO., LIMITED
Verified Supplier
Room 1707-1708, Building A, Jiahe Building, 3006 Shennan Middle Road, Futian District, Shenzhen, Guangdong, China
IPL60R225CFD7AUMA1 Stock MOSFET Transistor FET Good Price
IPL60R225CFD7AUMA1 Stock MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power ......
Shenzhen Tengshengda ELECTRIC CO., LTD.
Verified Supplier
609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong
XFDFN Semiconductor Integrated Circuit Transistors FETs CSD13381F4 DQ PICOSTAR
CSD13381F4 DQ PICOSTAR Transistors FETs, MOSFETs Semiconductor Devices MORE STOCK P/N BRAND QTY P/N BRAND QTY P/N BRAND QTY L6566BH ST 2000 TJA1051TK/3,118 ......
HONG KONG KEEP BOOMING TECHNOLOGY CO.,LIMITED
Verified Supplier
RM2508,BlockA,JiaheHuaqiangBuilding ShenNanMiddleRd,Futian District, ShenZhen, CN
FET 700V CoolMOS CE Power Transistor MOS tube transient suppression triode
IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to ......
JULUN (H.K)CO.,LTD (DONGGUAN JULUN ELECTRONICS CO.,LTD)
Verified Supplier
Room 408 No:262 middle West Lake Road, Shilong Town, Dongguan City ,Guangdong Province, China
Transistors can ship immediately New in box BSS138
Channel Type: N Channel Drain Source Voltage Vds: 50V Continuous Drain Current Id: 220mA Drain Source On State Resistance: 3.5ohm Transistor Case Style: SOT-23 Transistor Mounting: Surface Mount Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max......
Shenzhen Wonder-Chip Electronics Company Limited
Verified Supplier
ADD:#2307.Hangyuan West Building , Zhenhua Road , Futian district , Shenzhen , China
FDN335N Transistor IC Chip 20V 1.7A 1W P Channel Mosfet Ic Surface Mount SOT-23
FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23 Features of FDN335N ● TrenchFET Power MOSFET ● Supper high density cell design Product Attributes of FDN335N Product FDN335N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to ......
SZ ADE Electronics Co., Ltd
Verified Supplier
Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Through Hole Diode Fet Chip IC IRFP460APBF 500V
Chips Diode Transistor IRFP460APBF Integrated Circuits PRODUCT DESCRIPTION IC Integrated Circuits MOSFET 500V N-CH HEXFET Chips Diode Transistor PRODUCT PROPERTIES Manufacturer: Vishay Product Category: MOSFET Technology: Si Mounting Style: Through Hole ......
Hong Kong Jia Li Xin Technology Limited
Verified Supplier
ROOM 1201,12/F TAI SANG BANK BUILDING 130-132 DES VOEUX ROAD,CENTRAL HK
Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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