A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type
Brand Name:Hua Xuan Yang
Certification:RoHS、SGS
Model Number:A94
Minimum Order Quantity:1000-2000 PCS
Delivery Time:1 - 2 Weeks
Payment Terms:L/C T/T Western Union
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Location:
Shenzhen Guangdong China
Address:
Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
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within 14 hours
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Product Details
TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)
FEATURE
High Breakdown Voltage
MARKING
A94=Device code
Solid dot=Green molding compound device, if none,the normal device
Z=Rank of hFE
XXX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| A94 | TO-92 | Bulk | 1000pcs/Bag |
| A94-TA | TO-92 | Tape | 2000pcs/Box |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Coll ector-Base Voltage | -400 | V |
| VCEO | Coll ector-Emitter Voltage | -400 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Coll ector Current -Continuous | -0.2 | A |
| ICM | Coll ector Current -Pulsed | -0.3 | A |
| PC | Coll ector Power Dissipation | 625 | mW |
| RθJA | Thermal Resist ance From Junction To ambient | 200 | ℃ /W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~+150 | ℃ |
ELECTRICAL CHARACTERISTICS
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100µA,IE=0 | -400 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -400 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100µA,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-400V,IE=0 | -0.1 | μA | ||
| Collector cut-off current | ICEO | VCE=-400V,IB=0 | -5 | μA | ||
| Emitter cut-off current | IEBO | VEB=-4V,IC=0 | -0.1 | μA | ||
DC current gain | hFE(1) | VCE=-10V, IC=-10mA | 80 | 300 | ||
| hFE(2) | VCE=-10V, IC=-1mA | 70 | ||||
| hFE(3) | VCE=-10V, IC=-100mA | 60 | ||||
| hFE(4) | VCE=-10V, IC=-50mA | 80 | ||||
Collector-emitter saturation voltage | VCE(sat)(1) | IC=-10mA,IB=-1mA | -0.2 | V | ||
| VCE(sat)(2) | IC=-50mA,IB=-5mA | -0.3 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA,IB=-1mA | -0.75 | V | ||
| Transition frequency | fT | VCE=-20V, IC=-10mA,f=30MHz | 50 | MHz |
CLASSIFICATION OF hFE(2)
| RANK | A | B | C |
| RANGE | 80-100 | 100-200 | 200-300 |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 3.300 | 3.700 | 0.130 | 0.146 |
| A1 | 1.100 | 1.400 | 0.043 | 0.055 |
| b | 0.380 | 0.550 | 0.015 | 0.022 |
| c | 0.360 | 0.510 | 0.014 | 0.020 |
| D | 4.300 | 4.700 | 0.169 | 0.185 |
| D1 | 3.430 | 0.135 | ||
| E | 4.300 | 4.700 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.440 | 2.640 | 0.096 | 0.104 |
| L | 14.100 | 14.500 | 0.555 | 0.571 |
| 0 | 1.600 | 0.063 | ||
| h | 0.000 | 0.380 | 0.000 | 0.015 |
A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type
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