1 - 10 Results for high power amplifier circuit diagram from 250000 Products
DC 12V 10W Solid State High Power Amplifier With SMA Connector
40dBm Solid RF Power Module 10w GPS Band 1550MHz 1650MHz SMA Conncetor DC 12V Power Amplifier Product Description: solid-state microwave source, can provide 10W continuous wave power, can realize output power adjustment of 0.1W~10W, high frequency stability, power amplifier built-in high-power circulator and load , suitable for loads of various standing wave ratios; has a complete protection circuit to ensure the reliable operation of the power...
2 - 6 GHz High Power RF Amplifier P1dB 33 dBm RF Broadband High Power Amplifier
High Power Amplifier 2-6 GHz P1dB 33 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
Audio Fr4 1.0mm Red PCB Automobile Power Amplifier Circuit Board
Audio Fr4 1.0mm Red PCB Automobile Power Amplifier Circuit Board High precision prototype PCB bulk production Max Layers 4 layers 8layers MIN Line width(mil) 4mil 4mil MIN Line space(mil) 4mil 4mil Min via (mechanical drilling) Board thickness≤1.2mm 0.05mm 0.2mm Board thickness≤2.5mm 0.3mm 0.3mm Board thickness>2.5mm Aspect Ration≤13:1 Aspect Ration≤13:1 Board thickness MAX 8mm 7mm MIN 4 layers:0.35mm; 2 layers:0.2mm; MAX Board size 610*1200mm...
Ping You Industrial Co.,Ltd
Verified Supplier
West of 2nd Floor, Building 10, Zhengzhong Science Park, Xintian Community, Fuhai Street, Bao'an District, Shenzhen China 518103
DC 12V/28V 20W High Power Amplifier Module with 40dBm Gain
DC 12V/28V 20W High Power Amplifier Module with 40dBm Gain Product Description: Our Digital Power Amplifier Module is a high power module designed for RF jamming applications. With an output power of 33dBm, it allows for a wide range of applications. The passband ripple is exceptionally low, at ≤2.0dB, ensuring stable performance over a wide range of frequencies, including LTE and NR frequencies. The working current is also low, at ≤0.8A, making...
EASTLONGE ELECTRONICS(HK) CO.,LTD
Verified Supplier
3F./4F., Zhenyingtai Technology Park, Hebei Industry Zone, Longhua New District, Shenzhen 518109, China
6 - 12 GHz P1dB 19 dBm S Band High Power Amplifier High Frequency
S Band Power Amplifier 6-12 GHz P1dB 19 dBm RF Power Amplifier Description SWT-158T is a high performance Microwave RF Amplifier, with standard frequency range of 6 to 12GHz. FEATURES · Frequency Range: 6-12GHz · Gain: 19dB · P1dB: +19dBm · OIP3: +26dBm · Noise Figure: 5.5dB (typ.) · DC Power: 9V to 15V @ 105mA · SMA-female connectorized Electrical Specifications @+25 °C, Zin=Zout=50 Ω, Vsupply = +12VDC Parameter Unit Minimum Typical Maximum...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
2.65 To 3.0 GHZ S Band High Power Amplifier Psat 20 dBm RF Power Amplifier
S Band Power Amplifier 2.65-3.0 GHZ Psat 20 dBm Rf Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
P1dB 24 dBm S Band High Power Amplifier 0.1 - 4 GHz RF Power Amplifier
S Band Power Amplifier 0.1-4 GHz P1dB 24 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
1 - 40 GHz Ka Band High Power Amplifier P1dB 20 dBm RF Power Amplifier
Ka Band Power Amplifier 1-40 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
1805-2170 MHZ S Band High Power Amplifier RF Amplifier Psat 53dBm
S Band Power Amplifier 1805-2170 MHZ Psat 53dBm Rf Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF / ELECTRICAL PARAMETER...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
0.1 To 3 GHz S Band High Power Amplifier P1dB 30 dBm RF Amplifier Module
S Band Power Amplifier 0.1-3 GHz P1dB 30 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃...
Nanjing Shinewave Technology Co., Ltd.
Verified Supplier
Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing
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