Part Number: PT08E16-26P MIL-DTL-26482 Series Product Description: MIL-DTL-26482 Series Ⅰ - Miniature Connector The MIL-DTL-26482 Series Ⅰ, also known as PT08E16-26P, is a miniature connector designed for military and aerospace applications. It is a 90 degree plug connector with a unique olive green cadmium shell finish, providing both functionality and aesthetics. Contact Termination The MIL-DTL-26482 Series Ⅰ connector features solder contact...
KAIDA HOLDING LIMITED
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Building 8, Zijin Industry Park, No.18 Fenghua Road, Nanjing City, Jiangsu Province, China
5*10mm2 A-Face Un-Doped N-Type Free-Standing GaN Single Crystal Substrate Resistivity <0.1 Ω·cm Power Device/Laser W
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. Researchers from North Carolina State University...
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite. The beta form is similar to diamond, and is used in a few applications. It has been the preferred choice in power semis for electric vehicles....
Shanghai GaNova Electronic Information Co., Ltd.
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Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
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