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MT41K128M16JT-125 Dram Memory Chips DDR2 1Gbit 64MX16 400MHz 400 Ps FBGA-84

China MT41K128M16JT-125 Dram Memory Chips DDR2 1Gbit 64MX16 400MHz 400 Ps FBGA-84 on sale
MT47H64M16NF-25E:M Dram memory chips DDR2 1Gbit 64MX16 400 MHz 400 ps FBGA-84 Specifications Product Attribute Attribute Value FBGA Code: D9RZH Data Bus Width: 16 bit Organization: 64 M x 16 Memory Size: 1 Gbit Maximum Clock Frequency: 400 MHz Supply Voltage - Max: 1.9 V Supply Voltage - Min: 1.7 V Supply Current - Max: 95 mA Minimum Operating Temperature: 0 C Maximum Operating Temperature: + 85 C Description The DDR2 SDRAM uses a double data...
Shenzhen Retechip Electronics Co., Ltd
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Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

Hot Sell DRAM Memory Chip FBGA-96 4GB MT41K256M16TW-107IT:P

China Hot Sell DRAM Memory Chip FBGA-96 4GB MT41K256M16TW-107IT:P on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.
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Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

Memory IC S27KL0642GABHM023 Integrated Circuit Chip 64Mbit HyperBus Memory Chip

China Memory IC S27KL0642GABHM023 Integrated Circuit Chip 64Mbit HyperBus Memory Chip on sale
Memory IC S27KL0642GABHM023 Integrated Circuit Chip 64Mbit HyperBus Memory Chip​ Product Description Of S27KL0642GABHM023 S27KL0642GABHM023 is HyperRAM (Self-Refresh DRAM) Memory Chip, 3.0 V/1.8 V, 64-Mbit, Automotive-E (Grade 1), the package is 24-FBGA (6x8). Specification Of S27KL0642GABHM023 Part Number: S27KL0642GABHM023 Single-Ended Clock (CK): 11 Bus Signals Technology: 38nm DRAM Memory Organization: 8M x 8 Wrapped Burst Lengths: 64 Bytes...
ShenZhen Mingjiada Electronics Co.,Ltd.
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1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips

China MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips on sale
MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips MT41K256M8DA-107:K Flash Memory Chips Product Description: The MT41K256M8DA-107:K Flash Memory Chips is a high-performance memory designed for embedded applications. It offers high-speed data transfer rates, low power consumption, and advanced security features. The device features a 32-bit wide data bus, allowing for maximum performance and data throughput. It is...
Shenzhen Sai Collie Technology Co., Ltd.
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1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

512Mbit Memory IC S80KS5123GABHV023 Integrated Circuit Chip FBGA24 Memory Chip

China 512Mbit Memory IC S80KS5123GABHV023 Integrated Circuit Chip FBGA24 Memory Chip on sale
512Mbit Memory IC S80KS5123GABHV023 Integrated Circuit Chip FBGA24 Memory Chip​ Product Description Of S80KS5123GABHV023 S80KS5123GABHV023 is a high-speed CMOS, self-refresh DRAM, with xSPI (Octal) interface. The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Specification Of S80KS5123GABHV023 Part Number: S80KS5123GABHV023 Technology: 25-nm DRAM Data Bus: 8-bit Data Bus Memory Interface:...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

S80KS5122GABHA023 Integrated Circuit Chip 512Mb DRAM Memory With HYPERBUS Interface

China S80KS5122GABHA023 Integrated Circuit Chip 512Mb DRAM Memory With HYPERBUS Interface on sale
Integrated Circuit Chip S80KS5122GABHA023 512Mb DRAM Memory With HYPERBUS Interface Product Description Of S80KS5122GABHA023 S80KS5122GABHA023 HYPERRAM™ 2.0 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S80KS5122GABHA023 Part Number: S80KS5122GABHA023 Product Category: DRAM Technology: PSRAM...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

S27KS0642GABHI033 200MHz Memory Chips Self Refresh DRAM 24-FBGA 64Mbit HyperBus

China S27KS0642GABHI033 200MHz Memory Chips Self Refresh DRAM 24-FBGA 64Mbit HyperBus on sale
200MHz Memory Chips S27KS0642GABHI033 Self Refresh DRAM 24-FBGA 64Mbit HyperBus Product Description Of S27KS0642GABHI033 S27KS0642GABHI033 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface, Pseudo SRAM Memory IC. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S27KS0642GABHI033 Part Number: S27KS0642GABHI033 Write Cycle Time - Word, Page: 35ns Interface Support: 1.8 V / 3.0 V Memory Interface:...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

FLASH DRAM Memory IC S71KS512SC0BHB003 Integrated Circuit Chip 24-FBGA 166MHz

China FLASH DRAM Memory IC S71KS512SC0BHB003 Integrated Circuit Chip 24-FBGA 166MHz on sale
FLASH DRAM Memory IC S71KS512SC0BHB003 Integrated Circuit Chip 24-FBGA 166MHz​ Product Description Of S71KS512SC0BHB003 S71KS512SC0BHB003 is FLASH, DRAM Memory IC, HyperFlash™ and HyperRAM™ Multi-Chip Package 1.8V/3V. Specification Of S71KS512SC0BHB003 Part Number: S71KS512SC0BHB003 Memory Size: 512 Mbit Package / Case: FBGA-24 Mounting Style: SMD/SMT Maximum Clock Frequency: 166 MHz Minimum Operating Temperature: - 40 C Maximum Operating...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

64Mbit Integrated Circuit Chip S27KS0642GABHM020 Pseudo SRAM Memory Chip 200MHz

China 64Mbit Integrated Circuit Chip S27KS0642GABHM020 Pseudo SRAM Memory Chip 200MHz on sale
64Mbit Integrated Circuit Chip S27KS0642GABHM020 Pseudo SRAM Memory Chip 200MHz​ Product Description Of S27KS0642GABHM020 S27KS0642GABHM020 64-Mb HyperRAM is a high-speed CMOS, self-refresh DRAM, with HyperBus interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HyperBus...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

96Gbit Memory Chip MT62F1536M64D8CZ-023 AUT:C SDRAM Mobile LPDDR5 DRAM Memory

China 96Gbit Memory Chip MT62F1536M64D8CZ-023 AUT:C SDRAM Mobile LPDDR5 DRAM Memory on sale
96Gbit Memory Chip MT62F1536M64D8CZ-023 AUT:C SDRAM Mobile LPDDR5 DRAM​ Memory Product Description Of MT62F1536M64D8CZ-023 AUT:C MT62F1536M64D8CZ-023 AUT:C is designed to meet the demands of 5G networks. The DRAM allows 5G smartphones to process data at peak speeds of up to 6.4Gbps. Specification Of MT62F1536M64D8CZ-023 AUT:C Part Number: MT62F1536M64D8CZ-023 AUT:C Organization: 1536 M X 64 Memory Size: 96 Gbit Data Bus Width: 64 Bit Package /...
ShenZhen Mingjiada Electronics Co.,Ltd.
Verified Supplier
1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China
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